Datasheet

OP184/OP284/OP484
Rev. J | Page 5 of 24
V
S
= ±15.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage, OP184/OP284E Grade
1
V
OS
100 μV
−40°C ≤ T
A
≤ +125°C 200 μV
Offset Voltage, OP184/OP284F Grade
1
V
OS
175 μV
−40°C ≤ T
A
≤ +125°C 375 μV
Offset Voltage, OP484E Grade
1
V
OS
150 μV
−40°C ≤ T
A
≤ +125°C 300 μV
Offset Voltage, OP484F Grade
1
V
OS
250 μV
−40°C ≤ T
A
≤ +125°C 500 μV
Input Bias Current I
B
80 450 nA
−40°C ≤ T
A
≤ +125°C 575 nA
Input Offset Current I
OS
−40°C ≤ T
A
≤ +125°C 50 nA
Input Voltage Range −15 +15 V
Common-Mode Rejection Ratio CMRR V
CM
= −14.0 V to +14.0 V, −40°C ≤ T
A
≤ +125°C 86 90 dB
V
CM
= −15.0 V to +15.0 V 80 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, −10 V ≤ V
O
≤ 10 V 150 1000 V/mV
R
L
= 2 kΩ, −40°C ≤ T
A
≤ +125°C 75 V/mV
Offset Voltage Drift E Grade ΔV
OS
/ΔT 0.2 2.00 μV/°C
Bias Current Drift ΔV
B
/ΔT 150 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1.0 mA 14.8 V
Output Voltage Low V
OL
I
L
= 1.0 mA −14.875 V
Output Current I
OUT
±10 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±2.0 V to ±18 V, −40°C ≤ T
A
≤ +125°C 90 dB
Supply Current/Amplifier I
SY
V
O
= 0 V, −40°C ≤ T
A
≤ +125°C 2.0 mA
Supply Current/Amplifier I
SY
V
S
= ±18 V, −40°C ≤ T
A
≤ +125°C 2.25 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 kΩ 2.4 4.0 V/µs
Full-Power Bandwidth BW
p
1% distortion, R
L
= 2 kΩ, V
O
= 29 V p-p 35 kHz
Settling Time t
S
To 0.01%, 10 V step 4 µs
Gain Bandwidth Product GBP 4.25 MHz
Phase Margin Φ
M
50 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.3 µV p-p
Voltage Noise Density e
n
f = 1 kHz 3.9 nV/√Hz
Current Noise Density i
n
0.4 pA/√Hz
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.