Datasheet
MAT03E MAT03F
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain
1
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA 100 165 80 165
I
C
= 100 µA 90 150 70 150
I
C
= 10 µA 80 120 60 120
Current Gain Matching
2
Dh
FE
I
C
= 100 µA,V
CB
= 0 V 0.5 3 0.5 6 %
Offset Voltage
3
V
OS
V
CB
= 0 V, I
C
= 100 µA 40 100 40 200 µV
Offset Voltage Change ∆V
OS
/∆V
CB
I
C
= 100 µA
vs. Collector Voltage V
CB1
= 0 V 11 150 11 200 µV
V
CB2
= –36 V 11 150 11 200 µV
Offset Voltage Change ∆V
OS
/∆I
C
V
CB
= 0 V 12 50 12 75 µV
vs. Collector Current I
C1
= 10 µA, I
C2
= 1 mA 12 50 12 75 µV
Bulk Resistance r
BE
V
CB
= 0 V 0.3 0.75 0.3 0.75 Ω
10 µA ≤ I
C
≤ 1 mA 0.3 0.75 0.3 0.75 Ω
Offset Current I
OS
I
C
= 100 µA, V
CB
= 0 V 6 35 6 45 nA
Collector-Base
Leakage Current I
CB0
V
CB
= –36 V = V
MAX
50 200 50 400 pA
Noise Voltage Density
4
e
N
I
C
= 1 mA, V
CB
= 0
f
O
= 10 Hz 0.8 0.8 nV/÷Hz
f
O
= 100 Hz 0.7 0.7 nV/÷Hz
f
O
= 1 kHz 0.7 0.7 nV/÷Hz
f
O
= 10 kHz 0.7 0.7 nV/÷Hz
Collector Saturation
Voltage V
CE(SAT)
I
C
= 1 mA, I
B
= 100 µA 0.025 0.1 0.025 0.1 V
–2–
REV. C
MAT03–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ T
A
= 25ⴗC, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
MAT03E MAT03F
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA 70 120 60 120
I
C
= 100 µA 60 105 50 105
I
C
= 10 µA 5090 4090
Offset Voltage V
OS
I
C
= 100 µA, V
CB
= 0 V 30 135 30 265 µV
Offset Voltage Drift
5
TCV
OS
I
C
= 100 µA, V
CB
= 0 V 0.3 0.5 0.3 1.0 µV/°C
Offset Current I
OS
I
C
= 100 µA, V
CB
= 0 V 1085 10200 nA
Breakdown Voltage BV
CEO
36 36 V
(@ –40ⴗC ≤ T
A
≤ 85ⴗC, unless otherwise noted.)
NOTES
1
Current gain is measured at collector-base voltages (V
CB
) swept from 0 to V
MAX
at indicated collector current. Typicals are measured at V
CB
= 0 V.
2
Current gain matching (∆h
FE
) is defined as: ∆h
FE =
100 ( ∆I
B
) h
FE
(min )
I
C
.
3
Offset voltage is defined as: V
OS
= V
BE1
– V
BE2
, where V
OS
is the differential voltage for I
C1
= I
C2
: V
OS
= V
BE1
– V
BE2
=
KT
q
In
I
C1
I
C2
.
4
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
5
Guaranteed by V
OS
test (TCV
OS
= V
OS
/T for V
OS
V
BE
) where T = 298
°
K for T
A
= 25°C.
Specifications subject to change without notice.