Datasheet

MAT01 Data Sheet
V
CB
= 15 V, I
C
= 10 µA, −55°C ≤ T
A
≤ +125°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments
MAT01AH MAT01GH
Unit Min Typ Max Min Typ Min
OFFSET VOLTAGE/CURRENT
Offset Voltage
V
OS
0.06
0.15
0.14
0.70
mV
Average Offset Voltage Drift
1
TCV
OS
0.15 0.50 0.35 1.8 µV/°C
Offset Current I
OS
0.9 8.0 1.5 15.0 nA
Average Offset Current Drift
2
TCI
OS
10 90 15 150 pA/°C
BIAS CURRENT Ι
Β
28 60 36 130 nA
CURRENT GAIN h
FE
167 400 77 300
LEAKAGE CURRENT
Collector to Base Leakage Current I
CBO
T
A
= 125°C, V
CB
= 30 V, I
E
= 0
3
15 80 25 200 nA
Collector to Emitter Leakage Current I
CES
T
A
= 125°C, V
CE
= 30 V, V
BE
= 0
1, 3
50 300 90 400 nA
Collector to Collector Leakage Current I
CC
T
A
= 125°C, V
CC
= 30 V
1
30 200 50 400 nA
1
Guaranteed by V
OS
test
( )
for
BE
V
OS
V
T
OS
V
OS
TCV <<≅
, T = 298 K for T
A
= 25°C.
2
Guaranteed by I
OS
test limits over temperature.
3
The collector to base (I
CBO
) and collector to emitter (I
CES
) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
Rev. D | Page 4 of 12