Datasheet

REV. A
–3–
DAC8512
WAFER TEST LIMITS
(@ V
DD
= +5.0 V 6 5%, T
A
= +258C, applies to part number DAC8512GBC only, unless otherwise noted)
Parameter Symbol Condition Min Typ Max Units
STATIC PERFORMANCE
Relative Accuracy INL –2 ±3/4 +2 LSB
Differential Nonlinearity DNL No Missing Codes –1 ±0.7 +1 LSB
Zero-Scale Error V
ZSE
Data = 000
H
+1/2 +3 LSB
Full-Scale Voltage V
FS
Data = FFF
H
4.085 4.095 4.105 V
LOGIC INPUTS
Logic Input Low Voltage V
IL
0.8 V
Logic Input High Voltage V
IH
2.4 V
Input Leakage Current I
IL
10 µA
SUPPLY CHARACTERISTICS
Positive Supply Current I
DD
V
IH
= 2.4 V, V
IL
= 0.8 V, No Load 1.5 2.5 mA
V
DD
= 5 V, V
IL
= 0 V, No Load 0.5 1 mA
Power Dissipation P
DISS
V
IH
= 2.4 V, V
IL
= 0.8 V, No Load 7.5 12.5 mW
V
DD
= 5 V, V
IL
= 0 V, No Load 2.5 5 mW
Power Supply Sensitivity PSS ∆V
DD
= ±5% 0.002 0.004 %/%
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS*
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V
Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
V
OUT
to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
I
OUT
Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA
Package Power Dissipation . . . . . . . . . . . . . .(T
J
max – T
A
)/θ
JA
Thermal Resistance θ
JA
8-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 103°C/W
8-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 158°C/W
Maximum Junction Temperature (T
J
max) . . . . . . . . . +150°C
Operating Temperature Range . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability .
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the DAC8512 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
INL Temperature Package Package
Model (LSB) Range Description Option
DAC8512EP ±1 –40°C to +85°C 8-Pin P-DIP N-8
DAC8512FP ±2 –40°C to +85°C 8-Pin P-DIP N-8
DAC8512FS ±2 –40°C to +85°C 8-Lead SOIC SO-8
DAC8512GBC ±2 +25°C Dice