Datasheet

–3–REV. D
DAC10
WAFER TEST LIMITS
DAC10N
Parameter Symbol Conditions Limit Units
RESOLUTION 10 Bits min
MONOTONICITY 10 Bits min
NONLINEARITY NL ±0.5 LSB max
OUTPUT VOLTAGE COMPLIANCE V
OC
True 1 LSB +10 V max
–5 V min
OUTPUT CURRENT RANGE I
FS
±3.996 mA ±18 µA max
ZERO-SCALE CURRENT I
ZS
All Bits OFF 0.5 µA max
LOGIC INPUT “1” V
IH
I
IN
= 100 nA 2 V min
LOGIC INPUT “0” V
IL
V
LC
@ Ground 0.8 V max
I
IN
= –100 µA
POSITIVE SUPPLY CURRENT I+ V+ = 15 V 4 mA max
NEGATIVE SUPPLY CURRENT I– V+ = –15 V –15 mA max
NOTE: Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard produce dice.
TYPICAL ELECTRICAL CHARACTERISTICS
DAC10F
Parameter Symbol Conditions Typ Units
SETTLING TIME t
S
To ±1/2 LSB When Output Is Switched from 0 to FS 85 ns
GAIN TEMPERATURE
COEFFICIENT (TC) V
REF
Tempco Excluded ±10 ppm FS/°C
OUTPUT CAPACITANCE 18 pF
OUTPUT RESISTANCE 10 MΩ
(@ V
S
= 615 V, I
REF
= 2 mA, T
A
= +258C, unless otherwise noted. Output characteristics refer to both
I
OUT
and I
OUT
).
(@ V
S
= 615 V, I
REF
= 2 mA, unless otherwise noted. Output characteristics
refer to both I
OUT
and I
OUT
).
DICE CHARACTERISTICS
DIE SIZE 0.091 3 0.087 inch, 7,917 sq. mils
(2.311 3 2.210 mm, 5.107 sq. mm)