Datasheet

REV. E–4–
AMP02
1. RG
1
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG
2
9. SENSE
CONNECT SUBSTRATE TO V–
8
1
DIE SIZE 0.103 inch ⴛ 0.116 inch, 11,948 sq. mils
(2.62 mm ⴛ 2.95 mm, 7.73 sq. mm)
NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS*
(@ V
S
= ⴞ15 V, V
CM
= 0 V, T
A
= 25ⴗC, unless otherwise noted.)
AMP02 GBC
Parameter Symbol Conditions Limits Unit
Input Offset Voltage V
IOS
200 µV max
Output Offset Voltage V
OOS
8 mV max
V
S
= ±4.8 V to ±18 V
G = 1000 110
Power Supply PSR G = 100 110 dB
Rejection G = 10 95
G = 1 75
Input Bias Current I
B
20 nA max
Input Offset Current I
OS
10 nA max
Input Voltage Range IVR Guaranteed by CMR Tests ±11 V min
V
CM
= ±11 V
G = 1000 110
Common-Mode CMR G = 100 110 dB
Rejection G = 10 95
G = 1 75
Gain Equation Accuracy
G =
50 kΩ
R
G
+1, G =1000
0.7 % max
Output Voltage Swing V
OUT
R
L
= 1 kΩ±12 V min
Supply Current I
SY
6 mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.