Datasheet
REV. 0–6–
ADuC831
NOTES
1
Temperature Range –40ºC to +125ºC.
2
ADC linearity is guaranteed during normal Micro Converter core operation.
3
ADC LSB Size = V
REF
/2
12
i.e., for Internal V
REF
= 2.5 V, 1 LSB = 610 V and for External V
REF
=1 V, 1 LSB = 244 V.
4
These numbers are not production tested but are guaranteed by design and/or characterization data on production release.
5
Offset and Gain Error and Offset and Gain Error Match are measured after factory calibration.
6
Based on external ADC system components, the user may need to execute a system calibration to remove additional external channel errors and achieve
these specifications.
7
SNR calculation includes distortion and noise components.
8
Channel-to-channel Crosstalk is measured on adjacent channels.
9
The Temperature Monitor will give a measure of the die temperature directly; air temperature can be inferred from this result.
10
DAC linearity is calculated using:
Reduced code range of 100 to 4095, 0 to V
REF
range.
Reduced code range of 100 to 3945, 0 to V
DD
range.
DAC Output Load = 10 kΩ and 100 pF.
11
DAC differential nonlinearity specified on 0 to V
REF
and 0 to V
DD
ranges
12
DAC specification for output impedance in the unbuffered case depends on DAC code.
13
DAC specifications for I
SINK
, voltage output settling time, and digital-to-analog glitch energy depend on external buffer implementation in unbuffered mode. DAC
in unbuffered mode tested with OP270 external buffer, which has a low input leakage current.
14
Measured with V
REF
and C
REF
pins decoupled with 0.1 µF capacitors to ground. Power-up time for the internal reference will be determined by the value of the
decoupling capacitor chosen for both the V
REF
and C
REF
pins.
15
When using an external reference device, the internal band gap reference input can be bypassed by setting the ADCCON1.6 bit. In this mode the V
REF
and C
REF
pins need to be shorted together for correct operation.
16
Flash/EE Memory reliability characteristics apply to both the Flash/EE program memory and the Flash/EE data memory.
17
Endurance is qualified to 100,000 cycles as per JEDEC Std. 22 method A117 and measured at -40ºC, +25ºC, and +125ºC. Typical endurance at
25ºC is 700,000 cycles.
18
Retention lifetime equivalent at junction temperature (Tj) = 55ºC as per JEDEC Std. 22 method A117. Retention lifetime based on an activation energy of 0.6 eV
will derate with junction temperature as shown in Figure 18 in the Flash/EE Memory description section of this data sheet.
19
Power supply current consumption is measured in Normal, Idle, and Power-Down Modes under the following conditions:
Normal Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Executing internal software loop.
Idle Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Execution suspended in idle mode.
Power-Down Mode: Reset = 0.4 V, All Port 0 pins = 0.4 V, All other digital I/O pins and Port 1 are open circuit, OSC off, TIC off.
20
DV
DD
power supply current will increase typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
Specifications subject to change without notice.
Parameter V
DD
= 5 V V
DD
= 3 V Unit Test Conditions/Comments
POWER REQUIREMENTS
19, 20
Power Supply Voltages
AV
DD
/DV
DD
to AGND 2.7 V min AV
DD
/DV
DD
= 3 V nom
3.3 V max
4.5 V min AV
DD
/DV
DD
= 5 V nom
5.5 V max
Power Supply Currents Normal Mode
DV
DD
Current 6 3 mA typ MCLKIN = 1 MHz
AV
DD
Current 1.7 1.7 mA max MCLKIN = 1 MHz
DV
DD
Current 25 12 mA max MCLKIN = 16 MHz
21 10 mA typ MCLKIN = 16 MHz
AV
DD
Current 1.7 1.7 mA max MCLKIN = 16 MHz
Power Supply Currents Idle Mode
DV
DD
Current 5 1 mA typ MCLKIN = 1 MHz
AV
DD
Current 0.14 0.14 mA typ MCLKIN = 1 MHz
DV
DD
Current
4
11 5 mA max MCLKIN = 16 MHz
10 4 mA typ MCLKIN = 16 MHz
AV
DD
Current 0.14 0.14 mA typ MCLKIN = 16 MHz
Power Supply Currents Power Down Mode MCLKIN = 2 MHz or 16 MHz
AV
DD
Current 3 2.5 A typ
DV
DD
Current 35 20 A max TIMECON.1 = 0
25 12 A typ
160 125 A typ TIMECON.1 = 1
Typical Additional Power Supply Currents
AV
DD
= DV
DD
= 5 V
PSM Peripheral 50 A typ
ADC 1.5 mA typ
DAC 150 A typ
SPECIFICATIONS
(continued)