Datasheet
Data Sheet  ADuC7019/20/21/22/24/25/26/27/28/29 
Rev. F | Page 51 of 104 
NONVOLATILE FLASH/EE MEMORY 
The ADuC7019/20/21/22/24/25/26/27/28/29 incorporate 
Flash/EE memory technology on-chip to provide the user with 
nonvolatile, in-circuit reprogrammable memory space. 
Like EEPROM, flash memory can be programmed in-system 
at a byte level, although it must first be erased. The erase is 
performed in page blocks. As a result, flash memory is often 
and more correctly referred to as Flash/EE memory. 
Overall, Flash/EE memory represents a step closer to the  
ideal memory device that includes nonvolatility, in-circuit 
programmability, high density, and low cost. Incorporated in 
the ADuC7019/20/21/22/24/25/26/27/28/29, Flash/EE memory 
technology allows the user to update program code space in-
circuit, without the need to replace one-time programmable 
(OTP) devices at remote operating nodes. 
Each part contains a 64 kB array of Flash/EE memory. The 
lower 62 kB is available to the user and the upper 2 kB contain 
permanently embedded firmware, allowing in-circuit serial 
download. These 2 kB of embedded firmware also contain a 
power-on configuration routine that downloads factory-
calibrated coefficients to the various calibrated peripherals 
(such as ADC, temperature sensor, and band gap references). 
This 2 kB embedded firmware is hidden from user code. 
Flash/EE Memory Reliability 
The Flash/EE memory arrays on the parts are fully qualified for 
two key Flash/EE memory characteristics: Flash/EE memory 
cycling endurance and Flash/EE memory data retention. 
Endurance quantifies the ability of the Flash/EE memory to be 
cycled through many program, read, and erase cycles. A single 
endurance cycle is composed of four independent, sequential 
events, defined as 
1.  Initial page erase sequence 
2.  Read/verify sequence (single Flash/EE) 
3.  Byte program sequence memory 
4.  Second read/verify sequence (endurance cycle) 
In reliability qualification, every half word (16-bit wide) 
location of the three pages (top, middle, and bottom) in the 
Flash/EE memory is cycled 10,000 times from 0x0000 to 
0xFFFF. As indicated in Table 1, the Flash/EE memory 
endurance qualification is carried out in accordance with 
JEDEC Retention Lifetime Specification A117 over the 
industrial temperature range of −40° to +125°C. The results 
allow the specification of a minimum endurance figure over a 
supply temperature of 10,000 cycles. 
Retention quantifies the ability of the Flash/EE memory to 
retain its programmed data over time. Again, the parts are 
qualified in accordance with the formal JEDEC Retention 
Lifetime Specification (A117) at a specific junction temperature 
(T
J
 = 85°C). As part of this qualification procedure, the 
Flash/EE memory is cycled to its specified endurance limit, 
described in Table 1, before data retention is characterized. This 
means that the Flash/EE memory is guaranteed to retain its data 
for its fully specified retention lifetime every time the Flash/EE 
memory is reprogrammed. In addition, note that retention 
lifetime, based on an activation energy of 0.6 eV, derates with T
J
as shown in Figure 61. 
150
300
450
600
30 40
55
70 85
100 125
135 150
RETENTION (Years)
0
04955-085
JUNCTION TEMPERATURE (°C)
Figure 61. Flash/EE Memory Data Retention
PROGRAMMING 
The 62 kB of Flash/EE memory can be programmed in-circuit, 
using the serial download mode or the provided JTAG mode. 
Serial Downloading (In-Circuit Programming) 
The ADuC7019/20/21/22/24/25/26/27/28/29 facilitate code 
download via the standard UART serial port or via the I
2
C port. 
The parts enter serial download mode after a reset or power 
cycle if the BM pin is pulled low through an external 1 kΩ 
resistor. After a part is in serial download mode, the user can 
download code to the full 62 kB of Flash/EE memory while  
the device is in-circuit in its target application hardware. An 
executable PC serial download is provided as part of the 
development system for serial downloading via the UART.  
The AN-806 Application Note describes the protocol for  
serial downloading via the I
2
C. 
JTAG Access 
The JTAG protocol uses the on-chip JTAG interface to facilitate 
code download and debug.  










