Datasheet

Data Sheet ADT7310
Rev. A | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
V
DD
to GND –0.3 V to +7 V
DIN Input Voltage to GND –0.3 V to V
DD
+ 0.3 V
DOUT Voltage to GND –0.3 V to V
DD
+ 0.3 V
SCLK Input Voltage to GND –0.3 V to V
DD
+ 0.3 V
CS Input Voltage to GND –0.3 V to V
DD
+ 0.3 V
CT and INT Output Voltage to GND –0.3 V to V
DD
+ 0.3 V
ESD Rating (Human Body Model) 2.0 kV
Operating Temperature Range
–55°C to +150°C
Storage Temperature Range –65°C to +160°C
Maximum Junction Temperature, T
JMAX
150°C
8-Lead SOIC-N (R-8)
Power Dissipation
1
W
MAX
= (T
JMAX
− T
A
2
)/θ
JA
Thermal Impedance
3
θ
JA
, Junction-to-Ambient (Still Air) 121°C/W
θ
JC
, Junction-to-Case 56°C/W
IR Reflow Soldering 220°C
Peak Temperature (RoHS-
Compliant Package)
260°C (0°C)
Time at Peak Temperature
20 sec to 40 sec
Ramp-Up Rate 3°C/sec maximum
Ramp-Down Rate –6°C/sec maximum
Time from 25°C to Peak Temperature 8 minutes maximum
1
Values relate to package being used on a standard 2-layer PCB. This gives a
worst-case θ
JA
and θ
JC
. See Figure 4 for a plot of maximum power dissipation
vs. ambient temperature (T
A
).
2
T
A
= ambient temperature.
3
Junction-to-case resistance is applicable to components featuring a
preferential flow direction, for example, components mounted on a heat
sink. Junction-to-ambient is more useful for air-cooled, PCB-mounted
components.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
1.2
0.8
1.0
0.6
0.2
0.4
0
–55 –50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
100 110 120 130 140 150
MAX PD = 3.4mW AT 150°C
07789-003
Figure 4. SOIC_N Maximum Power Dissipation vs. Temperature
ESD CAUTION