Datasheet
Table Of Contents
- Blackfin Dual Core Embedded Processor
- Features
- Memory
- Table Of Contents
- Revision History
- General Description
- ADSP-BF60x Detailed Signal Descriptions
- 349-Ball CSP_BGA Signal Descriptions
- GP I/O Multiplexing for 349-Ball CSP_BGA
- ADSP-BF60x Designer Quick Reference
- Specifications
- Operating Conditions
- Electrical Characteristics
- Processor — Absolute Maximum Ratings
- ESD Sensitivity
- Processor — Package Information
- Timing Specifications
- Clock and Reset Timing
- Power-Up Reset Timing
- Asynchronous Read
- Asynchronous Flash Read
- Asynchronous Page Mode Read
- Synchronous Burst Flash Read
- Asynchronous Write
- Asynchronous Flash Write
- All Accesses
- Bus Request/Bus Grant
- DDR2 SDRAM Clock and Control Cycle Timing
- DDR2 SDRAM Read Cycle Timing
- DDR2 SDRAM Write Cycle Timing
- Mobile DDR SDRAM Clock and Control Cycle Timing
- Mobile DDR SDRAM Read Cycle Timing
- Mobile DDR SDRAM Write Cycle Timing
- Enhanced Parallel Peripheral Interface Timing
- Link Ports
- Serial Ports
- Serial Peripheral Interface (SPI) Port—Master Timing
- Serial Peripheral Interface (SPI) Port—Slave Timing
- Serial Peripheral Interface (SPI) Port—SPI_RDY Slave Timing
- Serial Peripheral Interface (SPI) Port—Open Drain Mode Timing
- Serial Peripheral Interface (SPI) Port—SPI_RDY Timing
- General-Purpose Port Timing
- Timer Cycle Timing
- Up/Down Counter/Rotary Encoder Timing
- Pulse Width Modulator (PWM) Timing
- ADC Controller Module (ACM) Timing
- Universal Asynchronous Receiver-Transmitter (UART) Ports—Receive and Transmit Timing
- CAN Interface
- Universal Serial Bus (USB) On-The-Go—Receive and Transmit Timing
- RSI Controller Timing
- 10/100 Ethernet MAC Controller Timing
- JTAG Test And Emulation Port Timing
- Output Drive Currents
- Environmental Conditions
- ADSP-BF60x 349-Ball CSP_BGA Ball Assignments
- Outline Dimensions
- Automotive Products
- Ordering Guide
Rev. 0 | Page 102 of 112 | June 2013
ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609
Thermal Diode
The processor incorporates a thermal diode to monitor the die
temperature. The thermal diode is a grounded collector, PNP
Bipolar Junction Transistor (BJT). The SYS_TDA ball is con-
nected to the emitter and the SYS_TDK ball is connected to the
base of the transistor. These balls can be used by an external
temperature sensor (such as the ADM 1021A or the LM86 or
others) to read the die temperature of the chip.
The technique used by the external temperature sensor is to
measure the change in V
BE
when the thermal diode is operated
at two different currents. This is shown in the following
equation:
where:
n
Q
= multiplication factor close to 1, depending on process
variations
k = Boltzmann’s constant
T = temperature (°Kelvin)
q = charge of the electron
N = ratio of the two currents
The two currents are usually in the range of 10 micro Amperes
to 300 micro Amperes for the common temperature sensor
chips available.
Table 69 contains the thermal diode specifications using the
transistor model. Note that Measured Ideality Factor already
takes into effect variations in beta (Β).
V
BE
n
Q
kT
q
------
In(N)=
Table 69. Thermal Diode Parameters—Transistor Model
Symbol Parameter Min Typ Max Unit
I
FW
1
Forward Bias Current 10 300 A
I
E
Emitter Current 10 300 A
n
Q
2,
3
Transistor Ideality 1.006
R
T
2,
4
Series Resistance 2.8
1
Analog Devices does not recommend operation of the thermal diode under reverse bias.
2
Not 100% tested. Specified by design characterization.
3
The ideality factor, n
Q
, represents the deviation from ideal diode behavior as exemplified by the diode equation: I
C
= I
S
× (exp(qV
BE
/n
Q
kT– 1), where I
S
= saturation current,
q = electrical charge, V
BE
= voltage across the diode, k = Boltzmann Constant, and T = absolute temperature (Kelvin).
4
The series resistance (R
T
) can be used for more accurate readings as needed.