Datasheet

Rev. D | Page 32 of 88 | July 2013
ADSP-BF522/ADSP-BF523/ADSP-BF524/ADSP-BF525/ADSP-BF526/ADSP-BF527
ELECTRICAL CHARACTERISTICS
Table 18. Common Electrical Characteristics for All ADSP-BF52x Processors
Parameter Test Conditions Min Typical Max Unit
V
OH
High Level Output Voltage V
DDEXT
/V
DDMEM
= 1.7 V,
I
OH
=–0.5mA
1.35 V
V
OH
High Level Output Voltage V
DDEXT
/V
DDMEM
= 2.25 V,
I
OH
=–0.5mA
2.0 V
V
OH
High Level Output Voltage V
DDEXT
/V
DDMEM
= 3.0 V,
I
OH
=–0.5mA
2.4 V
V
OL
Low Level Output Voltage V
DDEXT
/V
DDMEM
= 1.7 V/2.25 V/
3.0 V,
I
OL
=2.0mA
0.4 V
I
IH
High Level Input Current
1
1
Applies to input balls.
V
DDEXT
/V
DDMEM
=3.6 V,
V
IN
=3.6V
10.0 μA
I
IL
Low Level Input Current
1
V
DDEXT
/V
DDMEM
=3.6 V, V
IN
= 0 V 10.0 μA
I
IHP
High Level Input Current JTAG
2
2
Applies to JTAG input balls (TCK, TDI, TMS, TRST).
V
DDEXT
= 3.6 V, V
IN
= 3.6 V 75.0 μA
I
OZH
Three-State Leakage Current
3
3
Applies to three-statable balls.
V
DDEXT
/V
DDMEM
= 3.6 V,
V
IN
=3.6V
10.0 μA
I
OZHTWI
Three-State Leakage Current
4
4
Applies to bidirectional balls SCL and SDA.
V
DDEXT
=3.0 V, V
IN
= 5.5 V 10.0 μA
I
OZL
Three-State Leakage Current
3
V
DDEXT
/V
DDMEM
= 3.6 V, V
IN
= 0 V 10.0 μA
C
IN
Input Capacitance
5,6
5
Applies to all signal balls, except SCL and SDA.
6
Guaranteed, but not tested.
f
IN
= 1 MHz, T
AMBIENT
= 25°C,
V
IN
=2.5V
58pF
C
INTWI
Input Capacitance
4,6
f
IN
= 1 MHz, T
AMBIENT
= 25°C,
V
IN
=2.5V
15 pF