Datasheet

Rev. A | Page 53 of 80 | July 2011
ADSP-BF504/ADSP-BF504F/ADSP-BF506F
FLASH—SPECIFICATIONS
Specifications subject to change without notice.
FLASH—PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The program and erase times and the number of program/ erase
cycles per block are shown in Table 45. Exact erase times may
change depending on the memory array condition. The best
case is when all the bits in the block or bank are at ‘0’
(pre programmed). The worst case is when all the bits in the
block or bank are at ‘1’ (not pre programmed). Usually, the
system overhead is negligible with respect to the erase time.
FLASH—ABSOLUTE MAXIMUM RATINGS
Table 46 shows the ADC absolute maximum ratings.
Table 45. Program/Erase Times and Endurance Cycles
Parameter Condition Typical
Typical
After 100k
Write/Erase
Cycles Max Unit
Erase Parameter Block (4K word)
1
0.31 2.5s
Erase Main Block (32K word)—preprogrammed 0.8 3 4 s
Erase Main Block (32K word)—not preprogrammed 1 4 s
Program
2
Word 12 12 100 μs
Program
2
Parameter Block (4K word) 40 ms
Program
2
Main Block (32K word) 300 ms
Suspend Latency Program 5 10 μs
Suspend Latency Erase 5 20 μs
Program/Erase Cycles (per Block) Main Blocks 100,000 Cycles
Program/Erase Cycles (per Block) Parameter Blocks 100,000 Cycles
1
The difference between pre programmed and not pre programmed is not significant (< 30 ms).
2
Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
Table 46. Flash Absolute Maximum Ratings
Parameter Rating
Junction Temperature While Biased See Table 20 on
Page 30
Storage Temperature Range See Table 20 on
Page 30
Flash Memory Supply Voltage (V
DDFLASH
) –0.2 V to +2.45 V