Datasheet
Rev. A | Page 27 of 80 | July 2011
ADSP-BF504/ADSP-BF504F/ADSP-BF506F
PROCESSOR—ELECTRICAL CHARACTERISTICS
Parameter Test Conditions Min Typical Max Unit
V
OH
High Level Output Voltage V
DDEXT
= 1.7 V, I
OH
= –0.5 mA 1.35 V
High Level Output Voltage V
DDEXT
= 2.25 V, I
OH
= –0.5 mA 2.0 V
High Level Output Voltage V
DDEXT
= 3.0 V, I
OH
= –0.5 mA 2.4 V
V
OL
Low Level Output Voltage V
DDEXT
= 1.7 V/2.25 V/3.0 V,
I
OL
= 2.0 mA
0.4 V
I
IH
High Level Input Current
1
V
DDEXT
=3.6 V, V
IN
= 3.6 V 10.0 μA
I
IL
Low Level Input Current
1
V
DDEXT
=3.6 V, V
IN
= 0 V 10.0 μA
I
IHP
High Level Input Current JTAG
2
V
DDEXT
= 3.6 V, V
IN
= 3.6 V 75.0 μA
I
OZH
Three-State Leakage Current
3
V
DDEXT
= 3.6 V, V
IN
= 3.6 V 10.0 μA
I
OZHTWI
Three-State Leakage Current
4
V
DDEXT
=3.0 V, V
IN
= 5.5 V 10.0 μA
I
OZL
Three-State Leakage Current
3
V
DDEXT
= 3.6 V, V
IN
= 0 V 10.0 μA
C
IN
Input Capacitance
5,6
f
IN
= 1 MHz, T
AMBIENT
= 25°C,
V
IN
=2.5V
58 pF
C
INTWI
Input Capacitance
4,6
f
IN
= 1 MHz, T
AMBIENT
= 25°C,
V
IN
=2.5V
10 pF
I
DDDEEPSLEEP
7
V
DDINT
Current in Deep Sleep Mode V
DDINT
= 1.2 V, f
CCLK
= 0 MHz,
f
SCLK
=0MHz, T
J
= 25°C,
ASF = 0.00
1.85 mA
I
DDSLEEP
V
DDINT
Current in Sleep Mode V
DDINT
= 1.2 V, f
SCLK
= 25 MHz,
T
J
= 25°C
2.1 mA
I
DD-IDLE
V
DDINT
Current in Idle V
DDINT
= 1.2 V, f
CCLK
= 50 MHz,
T
J
= 25°C, ASF = 0.42
18 mA
I
DD-TYP
V
DDINT
Current V
DDINT
= 1.40 V, f
CCLK
= 400 MHz,
T
J
= 25°C, ASF = 1.00
104 mA
V
DDINT
Current V
DDINT
= 1.225 V, f
CCLK
= 300 MHz,
T
J
= 25°C, ASF = 1.00
69 mA
V
DDINT
Current V
DDINT
= 1.2 V, f
CCLK
= 200 MHz,
T
J
= 25°C, ASF = 1.00
51 mA
I
DDHIBERNATE
8
Hibernate State Current V
DDEXT
=3.30V,
V
DDFLASH
=1.8 V, T
J
= 25°C,
CLKIN = 0 MHz (V
DDINT
= 0 V)
40 μA
I
DDSLEEP
9
V
DDINIT
Current in Sleep Mode f
CCLK
= 0 MHz, f
SCLK
> 0 MHz Table 18 +
(.16 × V
DDINT
× f
SCLK
)
mA
10
I
DDDEEPSLEEP
9
V
DDINT
Current in Deep Sleep Mode f
CCLK
= 0 MHz, f
SCLK
= 0 MHz Table 18 mA
I
DDINT
9
V
DDINT
Current f
CCLK
> 0 MHz, f
SCLK
≥ 0 MHz Table 18 +
(Table 19 × ASF) +
(.16 × V
DDINT
× f
SCLK
)
mA
I
DDFLASH1
Flash Memory Supply Current 1
— Asynchronous Read (5 MHz
NORCLK
11
)
10 20 mA
Flash Memory Supply Current 1
— Synchronous Read (50 MHz
NORCLK
11
)
4 Word 18 20 mA
8 Word 20 22 mA
16 Word 25 27 mA
Continuous 28 30 mA