Datasheet

Data Sheet ADP5061
Rev. C | Page 7 of 44
ABSOLUTE MAXIMUM RATINGS
Table 4. Absolute Maximum Ratings
Parameter Rating
VIN1, VIN2, VIN3 to AGND
–0.5 V to +20 V
All Other Pins to AGND –0.3 V to +6 V
Continuous Drain Current, Battery Supple-
mentary Mode, from ISO_Bx to ISO_Sx
2.1 A
Storage Temperature Range –65°C to +150°C
Operating Junction Temperature Range –40°C to +125°C
Soldering Conditions JEDEC J-STD-020
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is
specified for a device soldered in a circuit board for surface-
mount packages.
Table 5. Thermal Resistance
Package Type θ
JA
θ
JC
θ
JB
Unit
20-Lead WLCSP
1
46.8 0.7 9.2 °C/W
1
5 × 4 array, 0.5 mm pitch (2.6 mm × 2.0 mm); based on a JEDEC 2S2P, 4-layer
board with 0 m/sec airflow.
Maximum Power Dissipation
The maximum safe power dissipation in the ADP5061 package
is limited by the associated rise in junction temperature (T
J
) on
the die. At a die temperature of approximately 150°C (the glass
transition temperature), the properties of the plastic change.
Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, thereby perma-
nently shifting the parametric performance of the ADP5061.
Exceeding a junction temperature of 175°C for an extended
period can result in changes in the silicon devices, potentially
causing failure.
ESD CAUTION
Stresses a bove those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.