Datasheet
Data Sheet ADP2380
Rev. 0 | Page 17 of 28
OUTPUT CAPACITOR SELECTION
The output capacitor selection affects both the output ripple
voltage and the loop dynamics of the regulator.
During a load step transient on the output, for example, when
the load is suddenly increased, the output capacitor supplies the
load until the control loop has a chance to ramp up the inductor
current, which causes the output to undershoot. The output
capacitance required to satisfy the voltage droop requirement
can be calculated using the following equation:
( )
UVOUTOUTIN
STEPUV
UVOUT
VVV
LIK
C
_
2
_
2 ∆×−×
×∆×
=
where:
K
UV
is a factor typically of 2.
ΔI
STEP
is the load step.
ΔV
OUT_UV
is the allowable undershoot on the output voltage.
Another case occurs when a load is suddenly removed from
the output. The energy stored in the inductor rushes into the
capacitor, which causes the output to overshoot. The output
capacitance required to meet the overshoot requirement can
be calculated using the following equation:
( )
2
2
_
2
_
OUTOVOUTOUT
STEPOV
OVOUT
VVV
LIK
C
−∆+
×∆×
=
where:
K
OV
is a factor, typically, of 2.
ΔV
OUT_OV
is the allowable overshoot on the output voltage.
The output ripple is determined by the ESR and the capaci-
tance. Use the following equation to select a capacitor that can
meet the output ripple requirements:
RIPPLEOUTSW
L
RIPPLEOUT
Vf
I
C
_
_
8 ∆××
∆
=
L
RIPPLEOUT
ESR
I
V
R
∆
∆
=
_
where:
ΔV
OUT_RIPPLE
is the allowable output ripple voltage.
R
ESR
is the equivalent series resistance of the output capacitor.
Select the largest output capacitance given by C
OUT_UV
, C
OUT_OV
,
and C
OUT_RIPPLE
to meet both load transient and output ripple
performance.
The selected output capacitor voltage rating should be greater
than the output voltage. The rms current rating of the output
capacitor should be larger than the result of the following equation:
12
_
L
RMSC
I
I
OUT
∆
=
LOW-SIDE POWER DEVICE SELECTION
The ADP2380 has an integrated low-side MOSFET driver that
drives the low-side NFET. The selection of the low-side NFET
affects the dc-to-dc regulator performance.
The selected MOSFET must meet the following requirements:
• Drain-source voltage (VDS) must be greater than
1.2 × VIN.
• Drain current (ID) must be greater than 1.2 × I
LIMIT_MAX
,
which is the selected maximum current-limit threshold.
• The ADP2380 low-side gate drive voltage is 8 V. Ensure
that the selected MOSFET can fully turn on at 8 V. Total
gate charge (Qg at 8 V) must be less than 50 nC. Lower Qg
characteristics constitute higher efficiency.
• The low-side MOSFET carries the inductor current when
the high-side MOSFET is turned off. For low duty cycle
applications, the low-side MOSFET carries the output
current during most of the period. To achieve higher
efficiency, it is important to select a low on-resistance
MOSFET. The power conduction loss of the low-side
MOSFET can be calculated by using the following
equation:
P
FET_LOW
= I
OUT
2
× R
DSON
× (1 – D)
where R
DSON
is the on resistance of the low-side MOSFET.
• Make sure that the MOSFET can handle the thermal
dissipation due to the power loss.
Some recommended MOSFETs are listed in Table 8.
Table 8. Recommended MOSFETs
Vendor Part No. V
DS
(V) I
D
(A) R
DSON
(mΩ) Q
g
(nC)
Fairchild
FDS6298
30
13
12
10
Fairchild FDS8880 30 10.7 12 12
Fairchild FDMS7578 25 17 8 8
Vishay SiA430DJ 20 10.8 18.5 5.3
AOS AON7402 30 39 15 7.1
AOS AO4884L 40 10 16 13.6