Datasheet

REV.
ADN2830
–7–
GND
ASET
NC
PSET
IMPD
IMPDMON
GND4
V
CC
4
NC
NC
GND1
NC
V
CC
5
V
CC
1
PAVCAP
PAVCAP
V
CC
2
NC
GND2
IBIAS
GND2
GND2
IBIAS
NC
IBMON
IBMON
GND3
V
CC
3
ALS
FAIL
DEGRADE
MODE
18
16
24
32
NC = NO CONNECT
MPD
LD
V
CC
V
CC
FAIL
DEGRADE
100nF 10F
V
CC
GND
PLACE 100nF CAP
CLOSE TO PIN 8
100nF
GND
ASET
NC
PSET
IMPD
IMPDMON
GND4
V
CC
4
NC
NC
GND1
NC
V
CC
5
V
CC
1
PAVCAP
PAVCAP
V
CC
2
NC
GND2
IBIAS
GND2
GND2
IBIAS
NC
IBMON
IBMON
GND3
V
CC
3
ALS
FAIL
DEGRADE
MODE
18
16
24
32
NC = NO CONNECT
ADN2830
ADN2830
Figure 3. Test Circuit, Second ADN2830 Used in Parallel Current Boosting Mode to Achieve 400 mA Max IBIAS
B