Datasheet

ADM1166
Rev. 0 | Page 28 of 32
9
19 91
191
START BY
MASTER
ACK. BY
SLAVE
ACK. BY
MASTER
ACK. BY
MASTER
NO ACK.
FRAME 2
DATA BYTE
FRAME 1
SLAVE ADDRESS
FRAME N
DATA BYTE
FRAME 3
DATA BYTE
SCL
SDA
R/W
STOP
BY
MASTER
SCL
(CONTINUED)
SDA
(CONTINUED)
D7A0A11110 0 D6 D5 D4 D3 D2 D1 D0
D7 D6 D5 D4 D3 D2 D1
D0
D7 D6 D5 D4 D3 D2 D1 D0
09332-037
Figure 37. General SMBus Read Timing Diagram
SCL
SDA
PS S P
t
SU;STO
t
HD;STA
t
SU;STA
t
SU;DAT
t
HD;DAT
t
HD;STA
t
HIGH
t
BUF
t
LOW
t
R
t
F
09332-038
Figure 38. Serial Bus Timing Diagram
SMBus PROTOCOLS FOR RAM AND EEPROM
The ADM1166 contains volatile registers (RAM) and nonvolatile
registers (EEPROM). User RAM occupies Address 0x00 to
Address 0xDF, and the EEPROM occupies Address 0xF800 to
Address 0xFBFF.
Data can be written to and read from both the RAM and the
EEPROM as single data bytes. Data can be written only to
unprogrammed EEPROM locations. To write new data to a
programmed location, the location contents must first be erased.
EEPROM erasure cannot be done at the byte level. The EEPROM
is arranged as 32 pages of 32 bytes each, and an entire page
must be erased.
Page erasure is enabled by setting Bit 2 in the UPDCFG register
(Address 0x90) to 1. If this bit is not set, page erasure cannot
occur, even if the command byte (0xFE) is programmed across
the SMBus.