Datasheet

ADG854
Rev. 0 | Page 4 of 16
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
1.3 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
DS
= 100 mA; see Figure 16
1.5 1.7 Ω max
On Resistance Match Between Channels, ∆R
ON
0.03 Ω typ V
DD
= 2.7 V, V
S
= 0.6 V, I
DS
= 100 mA
0.05 Ω max
On Resistance Flatness, R
FLAT (ON)
0.48 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
DS
= 100 mA
0.66 Ω max
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage, I
S
(Off) ±10 pA typ V
S
= 0.6 V/3.3 V, V
D
= 3.3 V/0.6 V; see Figure 17
Channel On Leakage, I
D
, I
S
(On) ±30 pA typ V
S
= V
D
= 0.6 V or 3.3 V; see Figure 18
DIGITAL INPUTS
Input High Voltage, V
INH
1.35 V min
Input Low Voltage, V
INL
0.7 V max
Input Current
I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
0.05 μA max
Digital Input Capacitance, C
IN
4 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
25 ns typ R
L
= 50 Ω, C
L
= 35 pF
37 43 ns max V
S
= 1.5 V/0 V; see Figure 19
t
OFF
7 ns typ R
L
= 50 Ω, C
L
= 35 pF
7.4 8 ns max V
S
= 1.5 V; see Figure 19
Break-Before-Make Time Delay, t
BBM
22 ns typ R
L
= 50 Ω, C
L
= 35 pF
13 ns min V
S1
= V
S2
= 1 V; see Figure 20
Charge Injection 23 pC typ V
S
= 1.5 V, R
S
= 0 V, C
L
= 1 nF; see Figure 21
Off Isolation −75 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
Channel-to-Channel Crosstalk −85 dB typ
S1A to S2A/S1B to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 100 kHz; see Figure 25
−73 dB typ
S1A to S1B/S2A to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 100 kHz; see Figure 24
Total Harmonic Distortion, THD 0.15 % typ R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1.5 V p-p
Insertion Loss −0.07 dB typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
–3 dB Bandwidth 100 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
C
S
(Off) 20 pF typ
C
D
, C
S
(On) 52 pF typ
POWER REQUIREMENTS V
DD
= 3.6 V
I
DD
0.002 μA typ Digital inputs = 0 V or 3.6 V
1.0 μA max
1
Guaranteed by design, not subject to production test.