Datasheet

ADG836L
Rev. A | Page 5 of 16
Table 3. V
DD
= 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
1
Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 1 Ω typ V
DD
= 1.8 V, V
S
= 0 V to V
DD
, I
S
= 10 mA
1.4 2.2 2.2 Ω max (Figure 18)
2 4 4 Ω typ V
DD
= 1.65 V, V
S
= 0 V to V
DD
, I
S
= 10 mA
On Resistance Match between
Channels (∆R
ON
)
0.1 Ω typ V
DD
= 1.65 V, V
S
= 0.7 V, I
S
= 10 mA
LEAKAGE CURRENTS
V
DD
= 1.95 V
Source Off Leakage I
S
(OFF) ±0.2 nA typ V
S
= 0.6 V/1.65 V, V
D
= 1.65 V/0.6 V
±0.4 ±4 ±25 nA max (Figure 19)
Channel On Leakage I
D
, I
S
(ON) ±0.2 nA typ V
S
= V
D
= 0.6 V or 1.65 V Figure 20
±0.6 ±10 ±75 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
0.65 V
DD
V min
Input Low Voltage, V
INL
0.35 V
DD
V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
C
IN
, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
28 ns typ R
L
= 50 Ω, C
L
= 35 pF
37 38 39 ns max V
S
= 1.5 Ω/0 V (Figure 21)
t
OFF
7 ns typ R
L
= 50 Ω, C
L
= 35 pF
9 10 11 ns max V
S
= 1.5 V (Figure 21)
Break-before-Make Time Delay
(t
BBM
)
21 ns typ R
L
= 50 Ω, C
L
= 35 pF
5 ns min V
S1
= V
S2
= 1 V (Figure 22)
Charge Injection 20 pC typ V
S
= 1 V, R
S
= 0 V, C
L
= 1 nF (Figure 23)
Off Isolation −67 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz,
(Figure 24)
Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B;
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz
(Figure 27)
−67 dB typ S1A−S1B/S2A−S2B;
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz
(Figure 25)
Total Harmonic Distortion
(THD + N)
0.14 % R
L
= 32 Ω, f = 20 Hz to 20 kHz,
V
S
= 1.2 V p-p
Insertion Loss −0.08 dB typ R
L
= 50 Ω, C
L
= 5 pF (Figure 25)
–3 dB Bandwidth 57 MHz typ R
L
= 50 Ω, C
L
= 5 pF (Figure 25)
C
S
(OFF) 25 pF typ
C
D
, C
S
(ON) 75 pF typ
POWER REQUIREMENTS V
DD
= 1.95 V
I
DD
0.003 µA typ Digital inputs = 0 V or 1.95 V
1.0 4 µA max
1
Temperature range for Y version is −40°C to +125°C.
2
Guaranteed by design, not subject to production test.