Datasheet

(V
DD
= 5 V  10%, GND = 0 V.)
ADG819/ADG820–SPECIFICATIONS
1
Parameter
–40C to –40C to
25C +85C +125C
2
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
ON Resistance (R
ON
) 0.5 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA;
ON Resistance Match Between
0.6 0.7 0.8 Ω max Test Circuit 1
Channels (∆R
ON
) 0.06 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.08 0.1 0.12 Ω max
ON Resistance Flatness (R
FLAT(ON)
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.17 0.2 0.25 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ± 0.01
± 0.25 ± 3 ± 10
nA typ
nA max
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01
± 0.25 ± 3 ± 25
nA typ
nA max
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V;
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN,
Digital Input Capacitance
2.0
0.8
0.005
± 0.1
5
V min
V max
µA typ
µA max
pF typ
V
IN
= V
INL
or V
INH
DYNAMIC CHARACTERISTICS
3
ADG819
t
ON
35 ns typ R
L
= 50 Ω, C
L
= 35 pF,
45 50 55 ns max V
S
= 3 V; Test Circuit 4
t
OFF
10 ns typ R
L
= 50 Ω, C
L
= 35 pF,
16 18 21 ns max V
S
= 3 V; Test Circuit 4
Break-Before-Make Time Delay, t
BBM
5 ns typ R
L
= 50 Ω, C
L
= 35 pF,
ADG820
1 ns min V
S1
= V
S2
= 3 V; Test Circuit 5
t
ON
10 ns typ R
L
= 50 Ω, C
L
= 35 pF,
18 20 22 ns max V
S
= 3 V; Test Circuit 4
t
OFF
26 ns typ R
L
= 50 Ω, C
L
= 35 pF,
40 45 50 ns max V
S
= 3 V; Test Circuit 4
Make-Before-Break Time Delay, t
MBB
15 ns typ R
L
= 50 Ω, C
L
= 35 pF,
1 ns min V
S
= 0 V; Test Circuit 6
Charge Injection 20 pC typ V
S
= 2.5 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 7
Off Isolation –71 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Test Circuit 8
Channel-to-Channel Crosstalk –72 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Test Circuit 10
Bandwidth –3 dB 17 MHz typ R
L
= 50 Ω, C
L
= 5 pF; Test Circuit 9
C
S
(OFF) 80 pF typ f = 1 MHz
C
D,
C
S
(ON) 300 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
Digital Inputs = 0 V or 5.5 V
I
DD
0.001 µA typ
1.0 2.0 µA max
NOTES
1
Temperature range is as follows: –40°C to +125°C.
2
ON resistance parameters tested with I
S
= 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0