Datasheet

ADG779
Rev. A | Page 4 of 12
V
DD
= 3 V ± 10%, GND = 0 V
1
Table 2.
B Version
Parameter 25°C
−40°C to
+85°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 6 7 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA, see Figure 12
10 Ω max
On-Resistance Match Between Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT (ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
LEAKAGE CURRENTS
2
V
DD
= 3.3 V
Source Off Leakage I
S
(Off) ±0.01 ±0.05 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V, see Figure 13
Channel On Leakage I
D
, I
S
(On) ±0.01 ±0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 Ω, C
L
= 35 pF
24 ns max V
S
= 2 V, see Figure 15
t
OFF
4 ns typ R
L
= 300 Ω, C
L
= 35 pF
7 ns max V
S
= 2 V, see Figure 15
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V, see Figure 16
Off Isolation –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
C
S
(Off) 7 pF typ f = 1 MHz
C
D
, C
S
(On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.