Datasheet

ADG779
Rev. A | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V
1
Table 1.
B Version
Parameter 25°C
−40°C to
+85°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA, see Figure 12
5 6 Ω max
On-Resistance Match Between Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT (ON)
) 0.75 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.2 Ω max
LEAKAGE CURRENTS
2
V
DD
= 5.5 V
Source Off Leakage I
S
(Off) ±0.01 ±0.05 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 13
Channel On Leakage I
D
, I
S
(On) ±0.01 ±0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 3 V, see Figure 15
t
OFF
3 ns typ R
L
= 300 Ω, C
L
= 35 pF
6 ns max V
S
= 3 V, see Figure 15
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 3 V, see Figure 16
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
C
S
(Off) 7 pF typ f = 1 MHz
C
D
, C
S
(On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.