Datasheet

REV. –2–
ADG751–SPECIFICATIONS
(V
DD
= +5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)
B Grade A Grade
–40ⴗC to –40ⴗC to
Parameter +25ⴗC +85ⴗC +25ⴗC +85ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
0 V to V
DD
V
On-Resistance (R
ON
)28 15 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
35 40 18 20 Ω max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
)3 2 Ω typ V
S
= 0 V to 2.5 V, I
DS
= 10 mA
53Ω max V
DD
= 4.5 V
LEAKAGE CURRENTS V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 ±0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 ±0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 ±0.01 nA typ V
D
= V
S
= 1 V, or 4.5 V;
±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
0.001 0.001 µA typ V
IN
= V
INL
or V
INH
±0.5 ±0.5 µA max
C
IN
, Digital Input Capacitance 2 2 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
9 9 ns typ R
L
= 300 Ω, C
L
= 35 pF;
13 13 ns max V
S
= 3 V, Test Circuit 4
t
OFF
3 3 ns typ R
L
= 300 Ω, C
L
= 35 pF;
5 5 ns max V
S
= 3 V, Test Circuit 4
Charge Injection 1 1 pC typ V
S
= 1 V, R
S
= 0 Ω, C
L
= 1.0 nF;
Test Circuit 5
Off Isolation –75 –65 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 MHz;
Test Circuit 6
–3 dB Bandwidth 180 300 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 7
C
S
(OFF) 4 4 pF typ
C
D
(OFF) 4 4 pF typ
C
D
, C
S
(ON) 26 15 pF typ
POWER REQUIREMENTS V
DD
= +5.5 V
I
DD
0.001 0.001 µA typ Digital Inputs = 0 V or +5.5 V
0.1 0.5 0.1 0.5 µA max
NOTES
1
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
A