Datasheet
CMOS Low Voltage
2.5 Ω Dual SPDT Switch
Data Sheet 
ADG736
Rev. D 
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FEATURES 
1.8 V to 5.5 V single supply 
Automotive temperature range: −40°C to +125°C 
2.5 Ω (typical) on resistance 
Low on resistance flatness 
−3 dB bandwidth > 200 MHz 
Rail-to-rail operation 
10-lead MSOP package 
Fast switching times 
t
ON
: 16 ns 
t
OFF
: 8 ns 
Typical power consumption (<0.01 μW) 
TTL-/CMOS-compatible 
Qualified for automotive applications 
APPLICATIONS 
USB 1.1 signal switching circuits 
Cell phones 
PDAs 
Battery-powered systems 
Communications systems 
Sample-and-hold systems 
Audio signal routing 
Audio and video switching 
Mechanical reed relay replacement 
FUNCTIONAL BLOCK DIAGRAM 
00046-001
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
ADG736
S1A
S1B
D1
IN1
S2B
IN2
D2
S2A
2
10
6
9
1
4
7
5
Figure 1. 
GENERAL DESCRIPTION 
The ADG736 is a monolithic device comprising two independ-
ently selectable CMOS single pole, double throw (SPDT) switches. 
These switches are designed using a submicron process that 
provides low power dissipation yet gives high switching speed, 
low on resistance, low leakage currents, and wide input signal 
bandwidth. 
The on resistance profile is very flat over the full analog signal 
range. This ensures excellent linearity and low distortion when 
switching audio signals. Fast switching speed also makes the 
part suitable for video signal switching. 
The ADG736 operates from a single 1.8 V to 5.5 V supply, 
making it ideally suited to portable and battery-powered 
instruments. 
Each switch conducts equally well in both directions when on, and 
each has an input signal range that extends to the power supplies. 
The ADG736 exhibits break-before-make switching action. 
The ADG736 is available in a 10-lead MSOP package. 
PRODUCT HIGHLIGHTS 
1.  1.8 V to 5.5 V Single-Supply Operation. The ADG736 
offers high performance, including low on resistance and 
fast switching times. It is fully specified and guaranteed 
with 3 V and 5 V supply rails. 
2.  Ver y Low R
ON
 (4.5 Ω Maximum at 5 V, 8 Ω Maximum at 3 V). 
At a supply voltage of 1.8 V, R
ON
 is typically 35 Ω over the 
temperature range. 
3.  Low On Resistance Flatness. 
4.  −3 dB Bandwidth > 200 MHz. 
5.  Low Power Dissipation. CMOS construction ensures low 
power dissipation. 
6.  Fast t
ON
/t
OFF
. 
7.  Break-Before-Make Switching Action. 
8.  10-Lead MSOP Package. 










