Datasheet

ADG719-EP
Rev. 0 | Page 4 of 12
V
DD
= 3 V ± 10%, GND = 0 V.
Table 2.
Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH 0 V to V
DD
V
Analog Signal Range
On Resistance (R
ON
) 6 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA;
12 Ω max see Figure 13
On Resistance Match Between
Channels (ΔR
ON
)
0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
0.4 Ω max
On Resistance Flatness (R
FLAT(ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
LEAKAGE CURRENTS V
DD
= 3.3 V
Source Off Leakage I
S
(Off) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.25 1 nA max see Figure 14
Channel On Leakage I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 3 V;
±0.25 5 nA max see Figure 15
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
1
t
ON
10 ns typ R
L
= 300 Ω, C
L
= 35 pF
15 ns max V
S
= 2 V; see Figure 16
t
OFF
4 ns typ R
L
= 300 Ω, C
L
= 35 pF
8 ns max V
S
= 2 V; see Figure 16
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V; see Figure 17
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 18
Channel-to-Channel Crosstalk −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 19
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 20
C
S
(Off) 7 pF typ
C
D
, C
S
(On) 27 pF typ
POWER REQUIREMENTS V
DD
= 3.3 V
Digital inputs = 0 V or 3.3 V
I
DD
0.001 μA typ
1.0 μA max
1
Guaranteed by design, not subject to production test.