Datasheet

ADG711/ADG712/ADG713
Rev. B | Page 4 of 16
V
DD
= +3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 5 5.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA;
8 Ω max See Figure 11
On Resistance Match Between 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
Channels (ΔR
ON
) 0.3 Ω max
On Resistance Flatness (R
FLAT(ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
LEAKAGE CURRENTS V
DD
= +3.3 V
Source Off Leakage I
S
(Off) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V
±0.1 ±0.2 nA max See Figure 12
Drain Off Leakage I
D
(Off) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/ 3 V
±0.1 ±0.2 nA max See Figure 12
Channel On Leakage I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V, or 3 V
±0.1 ±0.2 nA max See Figure 13
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.4 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
1
t
ON
13 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 2 V; see Figure 14
t
OFF
7 ns typ R
L
= 300 Ω, C
L
= 35 pF
12 ns max V
S
= 2 V; see Figure 14
Break-Before-Make Time Delay, t
D
7 ns typ R
L
= 300 Ω, C
L
= 35 pF
(ADG713 Only) 1 ns min V
S1
= V
S2
= 2 V; see Figure 15
Charge Injection 3 pC typ V
S
= 1.5 V; R
S
= 0 Ω, C
L
= 1 nF; see Figure 16
Off Isolation −58 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−78 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 18
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 19
C
S
10 pF typ
C
D
10 pF typ
C
D
, C
S
(On) 22 pF typ
POWER REQUIREMENTS V
DD
= +3.3 V
I
DD
0.001 μA typ Digital inputs = 0 V or 3 V
1.0 μ max
1
Guaranteed by design, not subject to production test.