Datasheet
CMOS Low Voltage 
2 Ω SPST Switches
ADG701L/ADG702L
Rev. 0 
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rights of third parties that may result from its use. Specifications subject to change without notice. No 
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Fax: 781.461.3113  ©2006 Analog Devices, Inc. All rights reserved. 
FEATURES 
1.8 V to 5.5 V single supply 
2 Ω (typical) on resistance 
Low on resistance flatness 
Guaranteed leakage specifications up to 85°C 
–3 dB bandwidth > 200 MHz 
Rail-to-rail operation 
Fast switching times 
t
ON 
18 ns 
t
OFF
 12 ns 
Typical power consumption < 0.01 μW 
TTL/CMOS-compatible 
APPLICATIONS 
Battery-powered systems 
Communication systems 
Sample-and-hold systems 
Audio signal routing 
Video switching 
Mechanical reed relay replacement 
GENERAL DESCRIPTION 
The ADG701L/ADG702L are monolithic CMOS SPST switches. 
These switches are designed using an advanced submicron 
process that provides low power dissipation, yet offers high 
switching speed, low on resistance, and low leakage currents. 
In addition, −3 dB bandwidths of greater than 200 MHz can 
be achieved. 
The ADG701L/ADG702L can operate from a single 1.8 V to 
5.5 V supply, making it ideal for use in battery-powered 
instruments and with the new generation of DACs and ADCs 
from Analog Devices. 
Figure 1 and Figure 2 show that with a logic input of 1, the 
switch of the ADG701L is closed, while that of the ADG702L 
is open. Each switch conducts equally well in both directions 
when on. 
The ADG701L/ADG702L are packaged as 5-lead SOT-23, 
6-lead SOT-23, and 8-lead MSOP. 
FUNCTIONAL BLOCK DIAGRAMS 
D
S
IN
ADG701L
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
05486-001
Figure 1. 
DS
IN
ADG702L
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
05486-020
Figure 2. 
PRODUCT HIGHLIGHTS 
1.  1.8 V to 5.5 V single-supply operation. The ADG701L/ 
ADG702L offer high performance, including low on 
resistance and fast switching times. The ADG701L/ 
ADG702L are fully specified and guaranteed with 3 V 
and 5 V supply rails. 
2.  Ver y low R
ON
 (3 Ω maximum at 5 V, 5 Ω maximum at 3 V). 
At 1.8 V operation, R
ON
 is typically 40 Ω over the 
temperature range. 
3.  On resistance flatness R
FLAT(ON)
 (1 Ω maximum). 
4.  −3 dB bandwidth > 200 MHz. 
5.  Low power dissipation. CMOS construction ensures low 
power dissipation. 
6.  Fast t
ON
/t
OFF
. 










