Datasheet

ADG658/ADG659
Rev. B | Page 7 of 20
2.7 V TO 3.6 V SINGLE SUPPLY
V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
B Version Y Version
Parameter +25°C
−40°C
to +85°C
−40°C
to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V V
DD
= 2.7 V, V
SS
= 0 V
On Resistance (R
ON
) 185 Ω typ V
S
= 0 V to 2.7 V, I
S
= 0.1 mA; see Figure 21
300 350 400 Ω max
On Resistance Match between 2 Ω typ V
S
= 1.5 V, I
S
= 0.1 mA
Channels (∆R
ON
) 4.5 6 7 Ω max
LEAKAGE CURRENTS V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ±0.005 nA typ V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 22
±0.2 ±5 nA max
Drain OFF Leakage I
D
(OFF) ±0.005 nA typ V
S
= 1 V/3 V, V
D
= 3 V/1 V; see Figure 23
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage I
D
, I
S
(ON) ±0.005 nA typ V
S
= V
D
= 1 V or 3 V, see Figure 24
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.5 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±1 μA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
1
t
TRANSITION
200 ns typ R
L
= 300 Ω, C
L
= 35 pF
370 440 490 ns max V
S
= 1.5 V; see Figure 25
t
ON
(EN)
230 ns typ R
L
= 300 Ω, C
L
= 35 pF
370 440 490 ns max V
S
= 1.5 V; see Figure 27
t
OFF
(EN)
50 ns typ R
L
= 300 Ω, C
L
= 35 pF
80 90 110 ns max V
S
= 1.5 V; see Figure 27
Break-Before-Make Time Delay, t
BBM
200 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 1.5 V; see Figure 26
Charge Injection 1 pC typ V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 28
2 pC max
Off Isolation −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF; f = 1 MHz; see Figure 31
(ADG659)
−3 dB Bandwidth
ADG658 160 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 30
ADG659 300 MHz typ
C
S
(OFF) 5 pF typ f = 1 MHz
C
D
(OFF)
ADG658 29 pF typ f = 1 MHz
ADG659 15 pF typ f = 1 MHz