Datasheet

ADG619-EP
Rev. 0 | Page 3 of 12
SPECIFICATIONS
DUAL SUPPLY
V
DD
= +5 V ± 10%, V
SS
= −5 V ± 10%, GND = 0 V. All specifications −55°C to +125°C, unless otherwise noted.
Table 1.
Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V V
DD
= +4.5 V, V
SS
= −4.5 V
On Resistance (R
ON
) 4 Ω typ V
S
= ±4.5 V, I
DS
= −10 mA; see Figure 9
6.5 10 Ω max
R
ON
Match Between Channels (ΔR
ON
) 0.7 Ω typ V
S
= ±4.5 V, I
DS
= −10 mA
1.1 1.45 Ω max
On-Resistance Flatness (R
FLAT (ON)
) 0.7 Ω typ V
S
= ±3.3 V, I
DS
= −10 mA
1.35 1.6 Ω max
LEAKAGE CURRENTS V
DD
= +5.5 V, V
SS
= −5.5 V
Source Off Leakage, I
S
(Off ) ±0.01 nA typ
V
S
= ±4.5 V, V
D
=
∓
4.5 V; see Figure 10
±0.25 ±3 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= ±4.5 V; see Figure 11
±0.25 ±25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
80 ns typ R
L
= 300 Ω, C
L
= 35 pF
120 215 ns max V
S
= 3.3 V; see Figure 12
t
OFF
45 ns typ R
L
= 300 Ω, C
L
= 35 pF
75 105 ns max V
S
= 3.3 V; see Figure 12
Break-Before-Make Time Delay, t
BBM
40 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 3.3 V; see Figure 13
Charge Injection 110 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 14
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 15
Channel-to-Channel Crosstalk −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 16
Bandwidth −3 dB 190 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 17
C
S
(Off ) 25 pF typ f = 1 MHz
C
D
, C
S
(On) 95 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= +5.5 V, V
SS
= −5.5 V
I
DD
0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max
I
SS
0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max
1
Guaranteed by design, not subject to production test.