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Table Of Contents

1 pC Charge Injection, 100 pA Leakage,

CMOS, ±5 V/+5 V/+3 V, Quad SPST Switches

ADG611/ADG612/ADG613

Rev. A

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FEATURES

1 pC charge injection

±2.7 V to ±5.5 V dual-supply operation

+2.7 V to +5.5 V single-supply operation

Automotive temperature range: −40°C to +125°C

100 pA maximum at 25°C leakage currents

85 Ω on resistance

Rail-to-rail switching operation

Fast switching times

16-lead TSSOP and SOIC packages

Typical power consumption: <0.1 μW

TTL-/CMOS-compatible inputs

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered systems

Communications systems

Sample-and-hold systems

Audio signal routing

Relay replacement

Avionics

FUNCTIONAL BLOCK DIAGRAM

NOTES

1. SWITCHES SHOWN FOR A LOGIC 1 INPUT.

IN1

IN2

IN4

ADG611

IN1

IN2

IN3

IN4

ADG612

IN1

IN2

IN3

IN4

ADG613

02753-001

Figure 1.

GENERAL DESCRIPTION

The ADG611/ADG612/ADG613 are monolithic CMOS devices

containing four independently selectable switches. These switches

offer ultralow charge injection of 1 pC over the full input signal

range and typical leakage currents of 10 pA at 25°C.

The devices are fully specified for ±5 V, +5 V, and +3 V supplies.

Each contains four independent single-pole, single-throw (SPST)

switches. The ADG611 and ADG612 differ only in that the digital

control logic is inverted. The ADG611 switches are turned on

with a logic low on the appropriate control input, whereas a

logic high is required to turn on the switches of the ADG612.

The ADG613 contains two switches with digital control logic

similar to that of the ADG611 and two switches in which the

logic is inverted.

Each switch conducts equally well in both directions when on

and has an input signal range that extends to the supplies. The

ADG613 exhibits break-before-make switching action. The

ADG611/ADG612/ADG613 are available in a small, 16-lead

TSSOP package, and the ADG611 is also available in a 16-lead

SOIC package.

PRODUCT HIGHLIGHTS

1. Ultralow charge injection (1 pC typically).

2. Dual ±2.7 V to ±5.5 V or single +2.7 V to +5.5 V operation.

3. Automotive temperature range: −40°C to +125°C.

4. Small, 16-lead TSSOP and SOIC packages.

Summary of content (16 pages)

PAGE 1
pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V, Quad SPST Switches ADG611/ADG612/ADG613 1 pC charge injection ±2.7 V to ±5.5 V dual-supply operation +2.7 V to +5.5 V single-supply operation Automotive temperature range: −40°C to +125°C 100 pA maximum at 25°C leakage currents 85 Ω on resistance Rail-to-rail switching operation Fast switching times 16-lead TSSOP and SOIC packages Typical power consumption: <0.
PAGE 2
ADG611/ADG612/ADG613 TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................6 Applications ....................................................................................... 1 ESD Caution...................................................................................6 Functional Block Diagram ....................................................
PAGE 3
ADG611/ADG612/ADG613 SPECIFICATIONS DUAL-SUPPLY OPERATION VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ΔRON On-Resistance Flatness, RFLAT(ON) LEAKAGE CURRENTS Source Off Leakage, IS(OFF) Drain Off Leakage, ID(OFF) Channel On Leakage, ID(ON), IS(ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C 85 115 2 4 25 40 ±0.01 ±0.
PAGE 4
ADG611/ADG612/ADG613 SINGLE-SUPPLY OPERATION VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2.
PAGE 5
ADG611/ADG612/ADG613 VDD = 3 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON LEAKAGE CURRENTS Source Off Leakage, IS(OFF) Drain Off Leakage, ID(OFF) Channel On Leakage, ID(ON), IS(ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C −40°C to +85°C −40°C to +125°C1 Unit 380 420 0 to VDD 460 V Ω typ ±0.25 ±2 ±0.25 ±2 ±0.25 ±6 ±0.01 ±0.1 ±0.01 ±0.1 ±0.01 ±0.1 2.0 0.
PAGE 6
ADG611/ADG612/ADG613 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted Table 4.
PAGE 7
ADG611/ADG612/ADG613 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN1 1 16 IN2 D1 2 15 D2 14 S2 13 VDD S1 3 VSS 4 ADG611/ ADG612/ ADG613 TOP VIEW 12 NC (Not to Scale) 11 S3 S4 6 D4 7 10 D3 IN4 8 9 IN3 NC = NO CONNECT 02753-002 GND 5 Figure 2. Pin Configuration Table 5. Pin Function Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Mnemonic IN1 D1 S1 VSS GND S4 D4 IN4 IN3 D3 S3 NC VDD S2 D2 IN2 Description Switch 1 Digital Control Input. Drain Terminal of Switch 1.
PAGE 8
ADG611/ADG612/ADG613 TYPICAL PERFORMANCE CHARACTERISTICS 250 600 TA = 25°C 500 200 ±3.3V ON RESISTANCE (Ω) ON RESISTANCE (Ω) VDD = 5V VSS = 0V 150 ±2.7V ±4.5V ±3.0V 100 400 300 +125°C +85°C 200 ±5.5V 50 100 –40°C +25°C –4 –3 –2 –1 0 1 2 3 4 5 VD, VS (V) 0 02753-003 0 –5 0 VDD = 2.7V 2.5 3.0 3.5 4.0 4.5 5.0 IS(OFF) LEAKAGE CURRENT (nA) VDD = 3.0V VDD = 3.3V 300 VDD = 4.5V 200 100 VDD = 5.0V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.
PAGE 9
ADG611/ADG612/ADG613 0 VDD = +3V VSS = 0V TA = 25°C 1.5 VDD = –5V VSS = +5V –10 T = 25°C A –20 VDD = +5V VSS = 0V 0.5 0 –0.5 VDD = +5V VSS = –5V –1.0 –30 –40 –50 –60 –70 –1.5 –80 –4 –3 –2 –1 0 1 2 3 4 5 VS (V) –90 0.3 02753-009 –2.0 –5 1k 0 VDD = +5V –10 VSS = –5V TA = 25°C 100 tON, VDD = +5V –20 VSS = 0V 60 tON, VDD = +5V 40 tOFF, VDD = +5V CROSSTALK (dB) 80 TIME (ns) 100 Figure 12. Off Isolation vs.
PAGE 10
ADG611/ADG612/ADG613 TERMINOLOGY VDD Most positive power supply potential. VINH Minimum input voltage for Logic 1. VSS Most negative power supply potential. IINL, IINH Input current of the digital input. IDD Positive supply current. CS(OFF) Off switch source capacitance. Measured with reference to ground. ISS Negative supply current. CD(OFF) Off switch drain capacitance. Measured with reference to ground. GND Ground (0 V) reference. CD(ON), CS(ON) On switch capacitance.
PAGE 11
ADG611/ADG612/ADG613 TEST CIRCUITS IDS V1 ID(OFF) A VD VS Figure 14. On Resistance S NC A VD Figure 16. On Leakage VSS 0.1µF 0.1µF VDD VSS S VS ID(ON) NC = NO CONNECT Figure 15. Off Leakage VDD D VOUT ADG611 50% 50% VIN ADG612 50% 50% VOUT D RL 300Ω IN CL 35pF 90% VIN 90% GND tON tOFF 02753-017 RON = V1/IDS D Figure 17. Switching Times VSS 0.
PAGE 12
ADG611/ADG612/ADG613 VDD VSS 0.1µF VDD NETWORK ANALYZER VSS S NETWORK ANALYZER VSS S 50Ω IN VS VS D D RL 50Ω GND VOUT VIN OFF ISOLATION = 20 log VOUT VS INSERTION LOSS = 20 log Figure 20. Off Isolation VDD 0.1µF VDD VSS 50Ω D S VIN1 VS VIN2 GND RL 50Ω CHANNEL-TO-CHANNEL CROSSTALK = 20 log |VS/VOUT| VOUT 02753-021 D S Figure 21. Channel-to-Channel Crosstalk Rev. A | Page 12 of 16 VOUT VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 22. Bandwidth VSS 0.
PAGE 13
ADG611/ADG612/ADG613 APPLICATIONS INFORMATION Figure 23 illustrates a photodetector circuit with programmable gain. With the resistor values shown in this figure, gains in the range of 2 to 16 can be achieved by using different combinations of switches. C1 R1 33kΩ 5V D1 VOUT 2.5V R2 510kΩ 5V S1 R4 D1 240kΩ R5 240kΩ S2 R6 D2 120kΩ R7 120kΩ (LSB) IN1 IN2 S3 D3 R8 120kΩ S4 D4 R9 120kΩ R3 510kΩ IN3 GND 2.5V R9 120kΩ GAIN RANGE: 2 TO 16 Figure 23.
PAGE 14
ADG611/ADG612/ADG613 OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 1 8 PIN 1 1.20 MAX 0.15 0.05 0.30 0.19 0.65 BSC 0.20 0.09 SEATING PLANE COPLANARITY 0.10 0.75 0.60 0.45 8° 0° COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 24. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters 10.00 (0.3937) 9.80 (0.3858) 4.00 (0.1575) 3.80 (0.1496) 9 16 1 8 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0039) COPLANARITY 0.10 0.51 (0.0201) 0.31 (0.
PAGE 15
ADG611/ADG612/ADG613 NOTES Rev.