Datasheet

ADG5436
Rev. A | Page 5 of 20
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Insertion Loss −0.6 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 30
C
S
(Off) 18 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 63 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 82 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +22 V, V
SS
= −22 V
I
DD
50
μA typ Digital inputs = 0 V or V
DD
70 110
μA max
I
SS
0.001
μA typ Digital inputs = 0 V or V
DD
1
μA max
V
DD
/V
SS
±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance, R
ON
19
Ω typ
V
S
= 0 V to 10 V, I
S
= −10 mA; see
Figure 25
22 27 31
Ω max V
DD
= 10.8 V, V
SS
= 0 V
On-Resistance Match
Between Channels, ∆R
ON
0.4
Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
0.8 1 1.2
Ω max
On-Resistance Flatness, R
FLAT (ON)
4.4
Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
5.5 6.5 7.5
Ω max
LEAKAGE CURRENTS V
DD
= 13.2 V, V
SS
= 0 V
Source Off Leakage, I
S
(Off)
±0.05
nA typ
V
S
= 1 V/10 V, V
D
= 10 V/1 V;
see Figure 28
±0.25 ±0.75 ±3.5
nA max
Drain Off Leakage, I
D
(Off)
±0.1
nA typ
V
S
= 1 V/10 V, V
D
= 10 V/1 V;
see Figure 28
±0.4 ±2 ±12
nA max
Channel On Leakage, I
D
(On), I
S
(On)
±0.1
nA typ V
S
= V
D
= 1 V/10 V; see Figure 24
±0.4 ±2 ±12
nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
5 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
250 ns typ R
L
= 300 Ω, C
L
= 35 pF
346 437 501 ns max V
S
= 8 V; see Figure 31
t
ON
250 ns typ R
L
= 300 Ω, C
L
= 35 pF
358 445 512 ns max V
S
= 8 V; see Figure 33
t
OFF
135 ns typ R
L
= 300 Ω, C
L
= 35 pF
178 212 237 ns max V
S
= 8 V; see Figure 33
Break-Before-Make Time Delay, t
D
125 ns typ R
L
= 300 Ω, C
L
= 35 pF
50 ns min V
S1
= V
S2
= 8 V; see Figure 32
Charge Injection, Q
INJ
80 pC typ
V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see
Figure 34