Datasheet
Data Sheet ADG5433/ADG5434
Rev. C | Page 5 of 24
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Insertion Loss −0.8 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 31
C
S
(Off) 15 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 23 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 52 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +22 V, V
SS
= −22 V
I
DD
50 µA typ Digital inputs = 0 V or V
DD
70
110
µA max
I
SS
0.001 µA typ Digital inputs = 0 V or V
DD
1 µA max
V
DD
/V
SS
±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance, R
ON
26 Ω typ
V
S
= 0 V to 10 V, I
S
= −10 mA; see
Figure 27
30
36
42
Ω max
V
DD
= 10.8 V, V
SS
= 0 V
On-Resistance Match Between Channels,
∆R
ON
0.3 Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
1 1.5 1.6 Ω max
On-Resistance Flatness, R
FLAT (ON)
5.5 Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
6.5
8
12
Ω max
LEAKAGE CURRENTS V
DD
= 13.2 V, V
SS
= 0 V
Source Off Leakage, I
S
(Off) ±0.05 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V
±0.25
±1
±7
nA max
Drain Off Leakage, I
D
(Off) ±0.1 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V
±0.4 ±4 ±30 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.1 nA typ V
S
= V
D
= 1 V/10 V; see Figure 26
±0.4 ±4 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 µA typ V
IN
= V
GND
or V
DD
±0.1 µA max
Digital Input Capacitance, C
IN
6 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
220 ns typ R
L
= 300 Ω, C
L
= 35 pF
290 357 400 ns max V
S
= 8 V
t
ON
(EN)
228 ns typ R
L
= 300 Ω, C
L
= 35 pF
289 370 426 ns max V
S
= 8 V; see Figure 34
t
OFF
(EN)
90 ns typ R
L
= 300 Ω, C
L
= 35 pF
115
131
151
ns max
V
S
= 8 V; see Figure 34
Break-Before-Make Time Delay, t
D
106 ns typ R
L
= 300 Ω, C
L
= 35 pF
54 ns min V
S1
= V
S2
= 8 V; see Figure 33
Charge Injection, Q
INJ
60 pC typ
V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see
Figure 35
Off Isolation
−60
dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 29