Datasheet

ADG5212/ADG5213
Rev. 0 | Page 4 of 20
±20 V DUAL SUPPLY
V
DD
= +20 V ± 10%, V
SS
= −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V max
On Resistance, R
ON
140 Ω typ
V
S
= ±15 V, I
S
= −1 mA,
see Figure 24
160 200 230 Ω max V
DD
= +18 V, V
SS
= −18 V
On-Resistance Match Between
Channels, ∆R
ON
1.5 Ω typ V
S
= ±15 V, I
S
= −1 mA
8 9 10 Ω max
On-Resistance Flatness, R
FLAT(ON)
33 Ω typ V
S
= ±15 V, I
S
= −1 mA
45 55 60 Ω max
LEAKAGE CURRENTS V
DD
= +22 V, V
SS
= −22 V
Source Off Leakage, I
S
(Off) 0.01 nA typ
V
S
= ±15 V, V
D
= ∓15 V,
see
Figure 23
0.1 0.2 0.4 nA max
Drain Off Leakage, I
D
(Off) 0.01 nA typ
V
S
= ±15 V, V
D
= ∓15 V,
see
Figure 23
0.1 0.2 0.4 nA max
Channel On Leakage, I
D
(On), I
S
(On) 0.02 nA typ V
S
= V
D
= ±15 V, see Figure 26
0.2 0.25 0.9 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
155 ns typ R
L
= 300 Ω, C
L
= 35 pF
195 235 255 ns max V
S
= 10 V, see Figure 30
t
OFF
145 ns typ R
L
= 300 Ω, C
L
= 35 pF
165 185 210 ns max V
S
= 10 V, see Figure 30
Break-Before-Make Time Delay, t
D
(ADG5213 Only)
35 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns min V
S1
= V
S2
= 10 V, see Figure 29
Charge Injection, Q
INJ
−0.5 pC typ
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF,
see Figure 31
Off Isolation −105 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
see Figure 25
Channel-to-Channel Crosstalk −105 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
see Figure 27
−3 dB Bandwidth 460 MHz typ
R
L
= 50 Ω, C
L
= 5 pF, see
Figure 28
Insertion Loss −6 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
see Figure 28
C
S
(Off) 2.8 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 4.8 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 8 pF typ V
S
= 0 V, f = 1 MHz