Datasheet

Data Sheet ADG5208/ADG5209
Rev. A | Page 7 of 24
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Drain Off Leakage, I
D
(Off ) ±0.005 nA typ V
S
= 1 V/30 V, V
D
= 30 V/1 V; see
Figure 30
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V/30 V; see Figure 27
±0.2 ±0.5 ±1.4 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8
V max
Input Current, I
INL
or I
INH
0.002 µA typ V
IN
= V
GND
or V
DD
±0.1 µA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
185 ns typ R
L
= 300 Ω, C
L
= 35 pF
230 245 259 ns max V
S
= 18 V; see Figure 33
t
ON
(EN) 170 ns typ R
L
= 300 Ω, C
L
= 35 pF
210 230 255 ns max V
S
= 18 V; see Figure 35
t
OFF
(EN) 125 ns typ R
L
= 300 Ω, C
L
= 35 pF
180 180 180 ns max V
S
= 18 V; see Figure 35
Break-Before-Make Time Delay, t
D
70 ns typ R
L
= 300 Ω, C
L
= 35 pF
35 ns min V
S1
= V
S2
= 18 V; see Figure 34
Charge Injection, Q
INJ
0.4 pC typ V
S
= 18 V, R
S
= 0 Ω, C
L
= 1 nF;
see Figure 36
Off Isolation −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 31
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 29
−3 dB Bandwidth R
L
= 50 Ω, C
L
= 5 pF; see Figure 32
ADG5208 65 MHz typ
ADG5209 130 MHz typ
Insertion Loss −6 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 32
C
S
(Off ) 5.5 pF typ V
S
= 18 V, f = 1 MHz
C
D
(Off )
ADG5208 51 pF typ V
S
= 18 V, f = 1 MHz
ADG5209 25 pF typ V
S
= 18 V, f = 1 MHz
C
D
(On), C
S
(On)
ADG5208 57 pF typ V
S
= 18 V, f = 1 MHz
ADG5209 32 pF typ V
S
= 18 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= 39.6 V
I
DD
80 µA typ Digital inputs = 0 V or V
DD
100 130 µA max
V
DD
9/40 V min/V max GND = 0 V, V
SS
= 0 V
1
Guaranteed by design; not subject to production test.