Datasheet

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Dual SPDT Switch

ADG436

Rev. B

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FEATURES

44 V supply maximum ratings

to V

analog signal range

Low on resistance (12 Ω typ)

Low ∆R

(3 Ω max)

Low R

match (2.5 Ω max)

Low power dissipation

Fast switching times

< 175 ns

OFF

< 145 ns

Low leakage currents (5 nA max)

Low charge injection (10 pC)

Break-before-make switching action

APPLICATIONS

Audio and video switching

Battery-powered systems

Test equipment

Communications systems

FUNCTIONAL BLOCK DIAGRAM

00030-001

S2A

IN1 IN2

1B S2B

ADG436

Figure 1.

GENERAL DESCRIPTION

The ADG436 is a monolithic CMOS device comprising two

independently selectable SPDT switches. It is designed on an

MOS process, which provides low power dissipation yet

gives high switching speed and low on resistance.

The on resistance profile is very flat over the full analog input

range, ensuring good linearity and low distortion when

switching audio signals. High switching speed also makes the

part suitable for video signal switching. CMOS construction

ensures ultralow power dissipation, making the part ideally

suited for portable and battery-powered instruments.

Each switch conducts equally well in both directions when on

and has an input signal range which extends to the power

supplies. In the off condition, signal levels up to the supplies

are blocked. All switches exhibit break-before-make switching

action for use in multiplexer applications. Inherent in the

design is low charge injection for minimum transients when

switching the digital inputs.

PRODUCT HIGHLIGHTS

1. Extended signal range.

The ADG436 is fabricated on an enhanced LC

MOS

process, giving an increased signal range that extends to

the supply rails.

2. Low power dissipation.

3. Low R

4. Single-supply operation.

For applications where the analog signal is unipolar, the

ADG436 can be operated from a single rail power supply.

Summary of content (12 pages)

PAGE 1
Dual SPDT Switch ADG436 FEATURES FUNCTIONAL BLOCK DIAGRAM 44 V supply maximum ratings VSS to VDD analog signal range Low on resistance (12 Ω typ) Low ∆RON (3 Ω max) Low RON match (2.5 Ω max) Low power dissipation Fast switching times tON < 175 ns tOFF < 145 ns Low leakage currents (5 nA max) Low charge injection (10 pC) Break-before-make switching action ADG436 S1A S2A D2 S1B S2B IN1 IN2 00030-001 D1 Figure 1.
PAGE 2
ADG436 TABLE OF CONTENTS Specifications..................................................................................... 3 Typical Performance Characteristics ..............................................8 Dual Supply ................................................................................... 3 Test Circuits..................................................................................... 10 Single Supply .................................................................................
PAGE 3
ADG436 SPECIFICATIONS DUAL SUPPLY1 VDD = +15 V, VSS = −15 V, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range RON +25°C −40°C to +85°C Unit VSS to VDD V Ω typ Ω max Ω typ Ω max Ω typ Ω max 12 25 ∆RON 1 3 RONMatch 1 2.5 LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) ±0.005 ±0.25 ±0.05 ±0.
PAGE 4
ADG436 SINGLE SUPPLY1 VDD = 12 V, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range RON RONMatch LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) +25°C Unit 0 to VDD V Ω typ Ω max Ω max 20 40 2.5 ±0.005 ±0.25 ±0.05 ±4 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH DYNAMIC CHARACTERISTICS2 tON −40°C to +85°C ±5 nA typ nA max nA typ nA max 2.4 0.8 ±0.005 ±0.
PAGE 5
ADG436 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Table 3. Parameter VDD to VSS VDD to GND VSS to GND Analog, Digital Inputs1 Continuous Current, S or D Peak Current, S or D (pulsed at 1 ms, 10% Duty Cycle max) Rating +44 V −0.3 V to +30 V +0.3 V to −30 V VSS − 2 V to VDD + 2V or 20 mA, whichever occurs first 20 mA 40 mA Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
PAGE 6
ADG436 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN1 1 16 NC S1A 2 15 NC D1 3 14 NC ADG436 VDD TOP VIEW VSS 5 (Not to Scale) 12 S2B 13 GND 6 11 D2 NC 7 10 S2A NC 8 9 IN2 NC = NO CONNECT 00030-002 S1B 4 Figure 2. Pin Configuration Table 5. Pin Function Descriptions Pin No. 1, 9 2, 4, 10, 12 3, 11 5 Mnemonic IN1, IN2 S1A, S1B, S2A, S2B 6 7, 8, 14, 15, 16 13 GND NC VDD VSS Descriptions Logic Control Input. Source Terminal. Can be an input or output. Drain Terminal.
PAGE 7
ADG436 TERMINOLOGY Table 6. Mnemonic RON ∆RON RONMatch IS (OFF) ID, IS (ON) VD (VS) CS (OFF) CD, CS (ON) tON tOFF tOPEN VINL VINH IINL (IINH) Crosstalk Off Isolation Charge Injection IDD ISS Descriptions Ohmic resistance between D and S. RON variation due to a change in the analog input voltage with a constant load current. Difference between the RON of any two channels. Source leakage current with the switch off. Channel leakage current with the switch on. Analog voltage on terminals D, S.
PAGE 8
ADG436 TYPICAL PERFORMANCE CHARACTERISTICS 26 20 VDD = 16.5V VSS = 0V TA = 25°C VDD = +5V VSS = –5V 22 18 RON (Ω) 16 RON (Ω) 18 14 +85°C 14 VDD = +10V VSS = –10V +25°C 12 6 –15 –10 00030-003 VDD = +15V VSS = –15V –5 0 VD, VS (V) 5 10 –40°C 10 15 0 3 6 9 12 15 VD, VS (V) Figure 3. RON as a Function of VD (VS): Dual Supply Figure 6. RON as a Function of VD (VS) for Different Temperatures: Single Supply 50 0.01 VDD = +16.5V VSS = –16.
PAGE 9
ADG436 0.01 3.5 VDD = +16.5V VSS = –16.5V TA = 25°C 3.0 2.5 IDD (mA) –0.01 2.0 1.5 1.0 –0.02 00030-009 –0.03 –15 0.5 –10 –5 0 VD, VS (V) 5 10 0 0 15 160 VD = +2V VS = –2V 140 120 100 00030-010 80 60 5 10 VD, VS (V) 15 100 200 300 400 500 600 700 800 SWITCHING FREQUENCY (kHz) 900 Figure 11. IDD as a Function of Switching Frequency: Dual Supply Figure 9. IS (ON) Leakage Current as a Function of VD (VS): Dual Supply 0 00030-011 IS (ON) (nA) 0 SWITCHING TIME (ns) VDD = +16.
PAGE 10
ADG436 TEST CIRCUITS IDS V1 D S A VD Figure 12. On Resistance A NC = NO CONNECT Figure 13. Off Leakage Figure 14. On Leakage VDD 0.1µF +3V VDD –10V ID (ON) D VD 00030-013 RON = V1/IDS S NC VS 00030-012 VD D 50% VIN SB D VS 50% 0V VOUT SA +10V RL 300Ω IN CL 35pF +10V tOFF VS 0V VSS GND tON 50% 50% 00030-015 –10V 0.1µF VSS Figure 15. Switching Times VDD 0.
PAGE 11
ADG436 APPLICATIONS INFORMATION POWER-SUPPLY SEQUENCING ADG436 SUPPLY VOLTAGES When using CMOS devices, care must be taken to ensure correct power-supply sequencing. Incorrect power-supply sequencing can result in the device being subjected to stresses beyond those listed in the Absolute Maximum Ratings. Always sequence VDD on first followed by VSS and the logic signals. An external signal can then be safely presented to the source or drain of the switch.
PAGE 12
ADG436 OUTLINE DIMENSIONS 0.800 (20.32) 0.790 (20.07) 0.780 (19.81) 16 9 1 8 0.280 (7.11) 0.250 (6.35) 0.240 (6.10) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) PIN 1 0.100 (2.54) BSC 0.060 (1.52) MAX 0.210 (5.33) MAX 0.195 (4.95) 0.130 (3.30) 0.115 (2.92) 0.015 (0.38) MIN 0.150 (3.81) 0.130 (3.30) 0.115 (2.92) 0.015 (0.38) GAUGE PLANE SEATING PLANE 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.005 (0.13) MIN 10.00 (0.3937) 9.80 (0.3858) 4.00 (0.1575) 3.80 (0.1496) 0.014 (0.36) 0.010 (0.25) 0.008 (0.