Datasheet

Data Sheet ADF4360-9
Rev. C | Page 3 of 24
SPECIFICATIONS
AV
DD
= DV
DD
= V
VCO
= 3.3 V ± 10%; AGND = DGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted.
1
Table 1.
Parameter B Version Unit Conditions/Comments
REF
IN
CHARACTERISTICS
REF
IN
Input Frequency
10/250
MHz min/MHz max
For f < 10 MHz, use a dc-coupled, CMOS-compatible
square wave, slew rate > 21 V/µs
REF
IN
Input Sensitivity 0.7/AV
DD
V p-p min/V p-p max AC-coupled
0 to AV
DD
V max CMOS-compatible
REF
IN
Input Capacitance 5.0 pF max
REF
IN
Input Current
±60
µA max
PHASE DETECTOR
Phase Detector Frequency
2
8 MHz max
CHARGE PUMP
I
CP
Sink/Source
3
With R
SET
= 4.7 kΩ
High Value 2.5 mA typ
Low Value
0.312
mA typ
R
SET
Range 2.7/10 kΩ min/kΩ max
I
CP
Three-State Leakage Current 0.2 nA typ
Sink and Source Current Matching 2 % typ 1.25 V ≤ V
CP
≤ 2.5 V
I
CP
vs. V
CP
1.5 % typ 1.25 V ≤ V
CP
≤ 2.5 V
I
CP
vs. Temperature 2 % typ V
CP
= 2.0 V
LOGIC INPUTS
Input High Voltage, V
INH
1.5 V min
Input Low Voltage, V
INL
0.6
V max
Input Current, I
INH
/I
INL
±1 µA max
Input Capacitance, C
IN
3.0 pF max
LOGIC OUTPUTS
Output High Voltage, V
OH
DV
DD
− 0.4 V min CMOS output chosen
Output High Current, I
OH
500 µA max
Output Low Voltage, V
OL
0.4 V max I
OL
= 500 µA
POWER SUPPLIES
AV
DD
3.0/3.6 V min/V max
DV
DD
AV
DD
V
VCO
AV
DD
AI
DD
4
5 mA typ
DI
DD
4
2.5 mA typ
I
VCO
4, 5
12.0 mA typ I
CORE
= 5 mA
I
RFOUT
4
3.5 to 11.0 mA typ RF output stage is programmable
Low Power Sleep Mode
4
7 µA typ
RF OUTPUT CHARACTERISTICS
5
Maximum VCO Output Frequency 400 MHz
I
CORE
= 5 mA; depending on L1 and L2; see the
Choosing the Correct Inductance Value section
Minimum VCO Output Frequency 65 MHz
VCO Output Frequency
90/108
MHz min/MHz max
L1, L2 = 270 nH; see the Choosing the Correct
Inductance Value section for other frequency values
VCO Frequency Range 1.2 Ratio f
MAX
/f
MIN
VCO Sensitivity 2 MHz/V typ
L1, L2 = 270 nH; see the Choosing the Correct
Inductance Value section for other sensitivity values
Lock Time
6
400 µs typ To within 10 Hz of final frequency