Datasheet

ADF4360-8
Rev. A | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +3.9 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
VCO
to GND −0.3 V to +3.9 V
V
VCO
to AV
DD
−0.3 V to +0.3 V
Digital I/O Voltage to GND −0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND −0.3 V to V
DD
+ 0.3 V
REF
IN
to GND −0.3 V to V
DD
+ 0.3 V
Operating Temperature Range −40°C to + 85°C
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature 150°C
CSP θ
JA
Thermal Impedance
Paddle Soldered 50°C/W
Paddle Not Soldered 88°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product
features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to
high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid
performance degradation or loss of functionality.