Datasheet

ADF4351 Data Sheet
Rev. 0 | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +3.9 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
VCO
to GND
1
−0.3 V to +3.9 V
V
VCO
to AV
DD
−0.3 V to +0.3 V
Digital I/O Voltage to GND
1
−0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND
1
−0.3 V to V
DD
+ 0.3 V
REF
IN
to GND
1
−0.3 V to V
DD
+ 0.3 V
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
1
GND = AGND = DGND = CP
GND
= SD
GND
= A
GNDVCO
= 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count for the ADF4351 is 36,955 (CMOS) and
986 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θ
JA
) is specified for a device with the
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type θ
JA
Unit
32-Lead LFCSP (CP-32-2)
27.3
°C/W
ESD CAUTION