Datasheet
Table Of Contents
- Features
- Applications
- General Description
- Functional Block Diagram
- Revision History
- Specifications
- Absolute Maximum Ratings
- Pin Configuration and Function Descriptions
- Typical Performance Characteristics
- Circuit Description
- Register Maps
- Register 0
- Register 1
- Register 2
- Register 3
- Register 4
- Initialization Sequence
- RF Synthesizer—A Worked Example
- Modulus
- Reference Doubler and Reference Divider
- 12-Bit Programmable Modulus
- Cycle Slip Reduction for Faster Lock Times
- Spurious Optimization and Fast lock
- Fast Lock Timer and Register Sequences
- Fast Lock—An Example
- Fast Lock—Loop Filter Topology
- Spur Mechanisms
- Spur Consistency and Fractional Spur Optimization
- Phase Resync
- Applications Information
- Outline Dimensions
ADF4150 Data Sheet
Rev. A | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +3.9 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
P
to AV
DD
−0.3 V to +5.8 V
Digital I/O Voltage to GND
1
−0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND
1
−0.3 V to V
DD
+ 0.3 V
REF
IN
to GND
1
−0.3 V to V
DD
+ 0.3 V
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
LFCSP θ
JA
Thermal Impedance
(Paddle-Soldered) 27.3°C/W
Reflow Soldering
Peak Temperature
260°C
Time at Peak Temperature 40 sec
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TRANSISTOR COUNT
23380 (CMOS) and 809 (bipolar)
ESD CAUTION