Datasheet
Data Sheet ADF4106
Rev. E | Page 3 of 24
SPECIFICATIONS
AV
DD
= DV
DD
= 3 V ± 10%, AV
DD
≤ V
P
≤ 5.5 V, AGND = DGND = CPGND = 0 V, R
SET
= 5.1 kΩ, dBm referred to 50 Ω, T
A
= T
MAX
to T
MIN
,
unless otherwise noted.
Table 1.
Parameter B Version
1
B Chips
2
(typ) Unit Test Conditions/Comments
RF CHARACTERISTICS See Figure 18 for input circuit
RF Input Frequency (RF
IN
) 0.5/6.0 0.5/6.0 GHz min/max
For lower frequencies, ensure
slew rate (SR) > 320 V/μs
RF Input Sensitivity –10/0 –10/0 dBm min/max
Maximum Allowable Prescaler
Output Frequency
3
300 300 MHz max P = 8
325 325 MHz max P = 16
REF
IN
CHARACTERISTICS
REF
IN
Input Frequency 20/300 20/300 MHz min/max For f < 20 MHz, ensure SR > 50 V/μs
REF
IN
Input Sensitivity
4
0.8/V
DD
0.8/V
DD
V p-p min/max Biased at AV
DD
/2 (see Note 5
5
)
REF
IN
Input Capacitance 10 10 pF max
REF
IN
Input Current ±100 ±100 μA max
PHASE DETECTOR
Phase Detector Frequency
6
104 104 MHz max ABP = 0, 0 (2.9 ns antibacklash pulse width)
CHARGE PUMP Programmable, see Table 9
I
CP
Sink/Source
High Value 5 5 mA typ With R
SET
= 5.1 kΩ
Low Value 625 625 μA typ
Absolute Accuracy 2.5 2.5 % typ With R
SET
= 5.1 kΩ
R
SET
Range 3.0/11 3.0/11 kΩ typ See Table 9
I
CP
Three-State Leakage 2 2 nA max 1 nA typical; T
A
= 25°C
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. V
CP
1.5 1.5 % typ 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. Temperature 2 2 % typ V
CP
= V
P
/2
LOGIC INPUTS
V
IH
, Input High Voltage 1.4 1.4 V min
V
IL
, Input Low Voltage 0.6 0.6 V max
I
INH
, I
INL
, Input Current ±1 ±1 μA max
C
IN
, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
V
OH
, Output High Voltage 1.4 1.4 V min
Open-drain output chosen, 1 kΩ pull-up
resistor to 1.8 V
V
OH
, Output High Voltage V
DD
− 0.4 V
DD
− 0.4 V min CMOS output chosen
I
OH
100 100 μA max
V
OL
, Output Low Voltage 0.4 0.4 V max I
OL
= 500 μA
POWER SUPPLIES
AV
DD
2.7/3.3 2.7/3.3 V min/V max
DV
DD
AV
DD
AV
DD
V
P
AV
DD
/5.5 AV
DD
/5.5 V min/V max AV
DD
≤ V
P
≤ 5.5V
I
DD
7
(AI
DD
+ DI
DD
) 11 9.0 mA max 9.0 mA typ
I
DD
8
(AI
DD
+ DI
DD
) 11.5 9.5 mA max 9.5 mA typ
I
DD
9
(AI
DD
+ DI
DD
) 13 10.5 mA max 10.5 mA typ
I
P
0.4 0.4 mA max T
A
= 25°C
Power-Down Mode
10
(AI
DD
+ DI
DD
)
10 10 μA typ