Datasheet

Data Sheet ADF4002
Rev. C | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +3.6 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
P
to GND −0.3 V to +5.8 V
V
P
to AV
DD
−0.3 V to +5.8 V
Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND −0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
A, RF
IN
B to GND
−0.3 V to VDD + 0.3 V
RF
IN
A to RF
IN
B ±320 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
THERMAL CHARACTERISTICS
Table 4. Thermal Impedance
Package Type θ
JA
Unit
TSSOP 150.4 °C/W
LFCSP 122 °C/W
ESD CAUTION