Datasheet

ADA4861-3
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the die
due to the amplifiers’ drive at the output. The quiescent power
is the voltage between the supply pins (V
S
) times the quiescent
current (I
S
).
Supply Voltage 12.6 V
Power Dissipation See Figure 3
Common-Mode Input Voltage −V
S
+ 1 V to +V
S
− 1 V
Differential Input Voltage ±V
S
P
D
= Quiescent Power + (Total Drive Power − Load Power)
Storage Temperature −65°C to +125°C
()
L
OUT
L
OUT
S
SS
D
R
V
R
VV
IVP
2
–
2
⎟
⎠
⎞
⎜
⎝
⎛
×+×=
Operating Temperature Range −40°C to +105°C
Lead Temperature JEDEC J-STD-20
Junction Temperature 150°C
RMS output voltages should be considered.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Airflow increases heat dissipation, effectively reducing θ
JA
.
In addition, more metal directly in contact with the package
leads and through holes under the device reduces θ
JA
.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 14-lead SOIC_N
(90°C/W) on a JEDEC standard 4-layer board. θ
JA
values are
approximations.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is
specified for device soldered in circuit board for surface-mount
packages.
2.5
0
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
05708-002
–55 125–45–35–25–15–5 5 152535455565758595105115
2.0
1.5
1.0
0.5
Table 4. Thermal Resistance
Package Type θ
JA
Unit
14-lead SOIC_N 90 °C/W
Maximum Power Dissipation
The maximum safe power dissipation for the ADA4861-3 is
limited by the associated rise in junction temperature (T
J
) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.