Datasheet

Data Sheet ADA4638-1
Rev. 0 | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—30 V OPERATION
V
S
= 30 V, V
CM
= V
SY
/2 V, T
A
= 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.5 4.5 V
−40°C ≤ T
A
≤ +125°C; SOIC 12.5 V
−40°C ≤ T
A
≤ +125°C; LFCSP 14.5 V
Offset Voltage Drift ∆V
OS
/∆T −40°C ≤ T
A
≤ +125°C; SOIC 0.08 V/°C
−40°C ≤ T
A
≤ +125°C; LFCSP 0.1 V/°C
Input Bias Current I
B
45 90 pA
−40°C ≤ T
A
≤ +125°C 500 pA
Input Offset Current I
OS
25 105 pA
−40°C ≤ T
A
≤ +125°C 170 pA
Input Voltage Range 0 27 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 27 V 130 142 dB
−40°C ≤ T
A
≤ +125°C 130 dB
Open-Loop Gain A
VO
R
L
= 10 kΩ, V
O
= 1 V to 29 V 140 165 dB
−40°C ≤ T
A
≤ +125°C 140 dB
Input Resistance, Common Mode R
INCM
330 GΩ
Input Capacitance, Differential Mode C
INDM
4 pF
Input Capacitance, Common Mode C
INCM
9 pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 10 kΩ to V
CM
29.90 29.92 V
−40°C ≤ T
A
≤ +125°C 29.85 V
R
L
= 2 kΩ to V
CM
29.50 29.58 V
−40°C ≤ T
A
≤ +125°C 29.35 V
Output Voltage Low V
OL
R
L
= 10 kΩ to V
CM
50 60 mV
−40°C ≤ T
A
≤ +125°C 95 mV
R
L
= 2 kΩ to V
CM
235 270 mV
−40°C ≤ T
A
≤ +125°C 445 mV
Short-Circuit Current I
SC
±38 mA
Closed-Loop Output Impedance Z
OUT
f = 1 MHz, A
V
= +1 220 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 4.5 V to 30 V 120 143 dB
−40°C ≤ T
A
≤ +125°C 120 dB
Supply Current/Amplifier I
SY
I
O
= 0 mA 0.85 1.05 mA
−40°C ≤ T
A
≤ +125°C 1.25 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ, C
L
= 20 pF, A
V
= +1 1.5 V/s
Overload Recovery Time R
L
= 10 kΩ, C
L
= 20 pF, A
V
= −100 8 s
Settling Time to 0.1% t
S
V
IN
= 5 V step, R
L
= 10 kΩ, C
L
= 20 pF, A
V
= −1 4 µs
Unity-Gain Crossover UGC V
IN
= 30 mV p-p, R
L
= 10 kΩ, C
L
= 20 pF, A
V
= +1 1.3 MHz
Phase Margin Φ
M
V
IN
= 30 mV p-p, R
L
= 10 kΩ, C
L
= 20 pF, A
V
= +1 69 Degrees
Gain-Bandwidth Product GBP V
IN
= 30 mV p-p, R
L
= 10 kΩ, C
L
= 20 pF, A
V
= +100 1.5 MHz
−3 dB Closed-Loop Bandwidth f
−3dB
V
IN
= 30 mV p-p, R
L
= 10 kΩ, C
L
= 20 pF, A
V
= +1 2.5 MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p f = 0.1 Hz to 10 Hz 1.2 µV p-p
Voltage Noise Density e
n
f = 1 kHz 66 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.1 pA/√Hz