Datasheet

REV. C
AD9631/AD9632
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage (+V
S
to –V
S
) . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing ¥ Bandwidth Product . . . . . . . . . . . 550 V-MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65ⴗC to +125ⴗC
Operating Temperature Range (A Grade) . . . . –40ⴗC to +85ⴗC
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300ⴗC
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead PDIP Package: q
JA
= 90∞C/W
8-Lead SOIC Package: q
JA
= 140∞C/W
METALLIZATION PHOTO
Dimensions shown in inches and (millimeters)
Connect Substrate to –V
S
AD9631
AD9632
–IN
2
+V
S
7
6
OUT
–IN
2
+V
S
7
6
OUT
3
+IN
4
–V
S
3
+IN
4
–V
S
0.046
(1.17)
0.046
(1.17)
0.050 (1.27)
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these
devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150ⴗC. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175ⴗC for an extended period can result in
device failure.
While the AD9631 and AD9632 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (150ⴗC) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves.
AMBIENT TEMPERATURE – ⴗC
2.0
1.5
0
–50
MAXIMUM POWER DISSIPATION – W
1.0
0.5
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
8-LEAD PDIP PACKAGE
8-LEAD SOIC PACKAGE
T
J
= +150 C
Figure 2. Maximum Power Dissipation
vs. Temperature
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD9631AN –40∞C to +85∞C PDIP N-8
AD9631AR –40∞C to +85∞C SOIC R-8
AD9631AR-REEL –40∞C to +85∞C SOIC R-8
AD9631AR-REEL7 –40∞C to +85∞C SOIC R-8
AD9631CHIPS Die
AD9632AN –40∞C to +85∞C PDIP N-8
AD9632AR –40∞C to +85∞C SOIC R-8
AD9632AR-REEL –40∞C to +85∞C SOIC R-8
AD9632AR-REEL7 –40∞C to +85∞C SOIC R-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD9631/AD9632 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.