Datasheet

AD8657/AD8659 Data Sheet
Rev. B | Page 4 of 24
ELECTRICAL CHARACTERISTICS—10 V OPERATION
V
SY
= 10 V, V
CM
= V
SY
/2 V, T
A
= 25°C, unless otherwise specified.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
V
CM
= 0 V to 10 V 350 µV
V
CM
= 0.3 V to 9.7 V, −40°C ≤ T
A
≤ +85°C 1.6 mV
V
CM
= 0.3 V to 9.7 V, −40°C ≤ T
A
≤ +125°C 2 mV
V
CM
= 0 V to 10 V, −40°C ≤ T
A
≤ +125°C 16 mV
Input Bias Current I
B
2 15 pA
−40°C ≤ T
A
≤ +125°C 2.6 nA
Input Offset Current I
OS
30 pA
−40°C ≤ T
A
≤ +125°C 5.2 nA
Input Voltage Range 0 10 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 10 V 88 105 dB
V
CM
= 0.3 V to 9.7 V, −40°C ≤ T
A
≤ +85°C 76 dB
V
CM
= 0.3 V to 9.7 V, −40°C ≤ T
A
≤ +125°C 75 dB
V
CM
= 0 V to 10 V, −40°C ≤ T
A
≤ +125°C 59 dB
Large Signal Voltage Gain A
VO
R
L
= 100 kΩ, V
O
= 0.5 V to 9.5 V 108 120 dB
−40°C ≤ T
A
≤ +125°C
100
dB
Offset Voltage Drift ΔV
OS
/ΔT 2 μV/°C
Input Resistance R
IN
10 GΩ
Input Capacitance, Differential Mode C
INDM
11 pF
Input Capacitance, Common Mode C
INCM
3.5 pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to V
CM
, −40°C ≤ T
A
≤ +125°C 9.98 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V
CM
, −40°C ≤ T
A
≤ +125°C 20 mV
Short-Circuit Current I
SC
±11 mA
Closed-Loop Output Impedance Z
OUT
f = 1 kHz, A
V
= 1 15 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
SY
= 2.7 V to 18 V 100 115 dB
−40°C ≤ T
A
≤ +125°C 90 dB
Supply Current per Amplifier I
SY
I
O
= 0 mA 18 22 µA
−40°C ≤ T
A
≤ +125°C 34 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 75 V/ms
Settling Time to 0.1% t
s
V
IN
= 1 V step, R
L
= 100 kΩ, C
L
= 10 pF 15 µs
Unity-Gain Crossover UGC V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 225 kHz
Phase Margin Φ
M
V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 60 Degrees
Gain Bandwidth Product GBP V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 100 230 kHz
−3 dB Closed-Loop Bandwidth
f
−3 dB
V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1
300
kHz
Channel Separation CS f = 10 kHz, R
L
= 1 MΩ 95 dB
EMI Rejection Ratio of +IN x EMIRR
V
IN
= 100 mV
PEAK
;
f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90 dB
NOISE PERFORMANCE
Voltage Noise e
n
p-p f = 0.1 Hz to 10 Hz 5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 50 nV/√Hz
f = 10 kHz 45 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.1 pA/√Hz