Datasheet

Data Sheet AD8657/AD8659
Rev. B | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—18 V OPERATION
V
SY
= 18 V, V
CM
= V
SY
/ 2 V, T
A
= 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
V
CM
= 0 V to 18 V 350 µV
V
CM
= 0.3 V to 17.7 V, −40°C ≤ T
A
≤ +85°C 1.8 mV
V
CM
= 0.3 V to 17.7 V, −40°C ≤ T
A
≤ +125°C 2 mV
V
CM
= 0 V to 18 V, −40°C ≤ T
A
≤ +125°C 16 mV
Input Bias Current I
B
5 20 pA
−40°C ≤ T
A
≤ +125°C 2.9 nA
Input Offset Current I
OS
40 pA
−40°C ≤ T
A
≤ +125°C 5.8 nA
Input Voltage Range 0 18 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 18 V 94 110 dB
V
CM
= 0.3 V to 17.7 V, −40°C ≤ T
A
≤ +85°C 82 dB
V
CM
= 0.3 V to 17.7 V, −40°C ≤ T
A
≤ +125°C 80 dB
V
CM
= 0 V to 18 V, −40°C ≤ T
A
≤ +125°C 64 dB
Large Signal Voltage Gain
A
VO
R
L
= 100 kΩ, V
O
= 0.5 V to 17.5 V
115
120
dB
−40°C ≤ T
A
≤ +125°C 105 dB
Offset Voltage Drift ΔV
OS
/ΔT 2 μV/°C
Input Resistance R
IN
10 GΩ
Input Capacitance, Differential Mode C
INDM
11 pF
Input Capacitance, Common Mode
C
INCM
3.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to V
CM
, −40°C ≤ T
A
≤ +125°C 17.97 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V
CM
, −40°C ≤ T
A
≤ +125°C 30 mV
Short-Circuit Current I
SC
±12 mA
Closed-Loop Output Impedance Z
OUT
f = 1 kHz, A
V
= 1 15 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
SY
= 2.7 V to 18 V 100 115 dB
−40°C ≤ T
A
≤ +125°C 90 dB
Supply Current per Amplifier I
SY
I
O
= 0 mA 18 22 µA
−40°C ≤ T
A
≤ +125°C 34 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 80 V/ms
Settling Time to 0.1% t
S
V
IN
= 1 V step, R
L
= 100 kΩ, C
L
= 10 pF 15 µs
Unity-Gain Crossover UGC V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 230 kHz
Phase Margin Φ
M
V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 60 Degrees
Gain Bandwidth Product GBP V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 100 230 kHz
−3 dB Closed-Loop Bandwidth f
−3 dB
V
IN
= 10 mV p-p, R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 305 kHz
Channel Separation CS f = 10 kHz, R
L
= 1 MΩ 95 dB
EMI Rejection Ratio of +IN x EMIRR V
IN
= 100 mV
PEAK
; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90 dB
NOISE PERFORMANCE
Voltage Noise e
n
p-p f = 0.1 Hz to 10 Hz 5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 50 nV/√Hz
f = 10 kHz 45 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.1 pA/√Hz