Datasheet

AD8657
Rev. A | Page 4 of 24
ELECTRICAL CHARACTERISTICS—10 V OPERATION
V
SY
= 10 V, V
CM
= V
SY
/2 V, T
A
= 25°C, unless otherwise specified.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
V
CM
= 0 V to 10 V 350 µV
V
CM
= 0 V to 10 V; −40°C ≤ T
A
≤ +125°C 9 mV
Input Bias Current I
B
2 15 pA
−40°C ≤ T
A
≤ +125°C 2.6 nA
Input Offset Current I
OS
30 pA
−40°C ≤ T
A
≤ +125°C 500 pA
Input Voltage Range 0 10 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 10 V 90 105 dB
V
CM
= 0 V to 10 V; −40°C ≤ T
A
≤ +125°C 64 dB
Large Signal Voltage Gain A
VO
R
L
= 100 kΩ, V
O
= 0.5 V to 9.5 V 105 120 dB
−40°C ≤ T
A
≤ +85°C 95 dB
−40°C ≤ T
A
≤ +125°C 67 dB
Offset Voltage Drift ΔV
OS
/ΔT 2 μV/°C
Input Resistance R
IN
10 GΩ
Input Capacitance, Differential Mode C
INDM
3.5 pF
Input Capacitance, Common Mode C
INCM
3.5 pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to V
CM
; −40°C ≤ T
A
≤ +125°C 9.98 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V
CM
; −40°C ≤ T
A
≤ +125°C 20 mV
Short-Circuit Current I
SC
±11 mA
Closed-Loop Output Impedance Z
OUT
f = 1 kHz, A
V
= 1 15 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
SY
= 2.7 V to 18 V 105 125 dB
−40°C ≤ T
A
≤ +125°C 70 dB
Supply Current per Amplifier I
SY
I
O
= 0 mA 18 22 µA
−40°C ≤ T
A
≤ +125°C 33 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 60 V/ms
Settling Time to 0.1% t
s
V
IN
= 1 V step, R
L
= 100 kΩ, C
L
= 10 pF 13 µs
Gain Bandwidth Product GBP R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 200 kHz
Phase Margin Φ
M
R
L
= 1 MΩ, C
L
= 10 pF, A
V
= 1 60 Degrees
Channel Separation CS f = 10 kHz, R
L
= 1 MΩ 105 dB
EMI Rejection Ratio of +IN x EMIRR
V
IN
= 100 mV
PEAK
; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90 dB
NOISE PERFORMANCE
Voltage Noise e
n
p-p f = 0.1 Hz to 10 Hz 5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 50 nV/√Hz
f = 10 kHz 45 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.1 pA/√Hz