Datasheet

Data Sheet AD8597/AD8599
Rev. E | Page 3 of 20
SPECIFICATIONS
V
SY
= ±5 V, V
CM
= 0 V, V
O
= 0 V, T
A
= 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
15 120 μV
−40°C ≤ T
A
≤ +125°C 180 μV
Offset Voltage Drift ΔV
OS
/ΔT −40°C ≤ T
A
≤ +125°C 0.8 2.2 μV/°C
Input Bias Current I
B
40 210 nA
−40°C ≤ T
A
≤ +125°C 340 nA
Input Offset Current I
OS
65 250 nA
−40°C ≤ T
A
≤ +125°C 340 nA
Input Voltage Range IVR −2.0 +2.0 V
Common-Mode Rejection Ratio CMRR −2.0 V ≤ V
CM
≤ +2.0 V 120 135 dB
−40°C ≤ T
A
≤ +125°C 105 dB
Large Signal Voltage Gain
A
VO
R
L
≥ 600 Ω, V
O
= −11 V to +11 V
105
110
dB
−40°C ≤ T
A
≤ +125°C 100 dB
Input Capacitance
Differential Capacitance C
DIFF
15.4 pF
Common-Mode Capacitance C
CM
5.5 pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 600 Ω 3.5 3.7 V
−40°C ≤ T
A
≤ +125°C 3.3 V
R
L
= 2 kΩ
3.7
3.8
V
−40°C ≤ T
A
≤ +125°C 3.5 V
Output Voltage Low V
OL
R
L
= 600 Ω −3.6 −3.4 V
−40°C ≤ T
A
≤ +125°C −3.3 V
R
L
= 2 kΩ −3.7 −3.5 V
−40°C ≤ T
A
≤ +125°C −3.4 V
Output Short-Circuit Current
I
SC
±52
mA
Closed-Loop Output Impedance Z
OUT
At 1 MHz, A
V
= 1 5 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
SY
= ±18 V to ±4.5 V 120 140 dB
−40°C ≤ T
A
≤ +125°C 118 dB
Supply Current per Amplifier I
SY
4.8 5.5 mA
−40°C ≤ T
A
≤ +125°C 6.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR A
V
= −1, R
L
= 2 kΩ 14 V/μs
A
V
= 1, R
L
= 2 kΩ 14 V/μs
Settling Time t
S
To 0.01%, step = 10 V 2 μs
Gain Bandwidth Product
GBP
10
MHz
Phase Margin Φ
M
60 Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise
e
n
p-p
0.1 Hz to 10 Hz
76
nV p-p
Voltage Noise Density e
n
f = 1 kHz 1.07 1.15 nV/√Hz
f = 10 Hz 1.5 nV/√Hz
Correlated Current Noise f = 1 kHz 2.0 pA/√Hz
f = 10 Hz 4.2 pA/√Hz
Uncorrelated Current Noise f = 1 kHz 2.4 pA/√Hz
f = 10 Hz 5.2 pA/√Hz
Total Harmonic Distortion + Noise THD + N G = 1, R
L
≥ 1 kΩ, f = 1 kHz, V
RMS
= 1 V −120 dB
Channel Separation CS f = 10 kHz −120 dB