Datasheet

AD8551/AD8552/AD8554 Data Sheet
Rev. E | Page 4 of 24
V
S
= 2.7 V, V
CM
= 1.35 V, V
O
= 1.35 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 5 μV
−40°C ≤ T
A
≤ +125°C 10 μV
Input Bias Current I
B
10 50 pA
AD8551/AD8554 −40°C ≤ T
A
≤ +125°C 1.0 1.5 nA
AD8552 −40°C ≤ T
A
≤ +85°C 160 300 pA
AD8552 −40°C ≤ T
A
≤ +125°C 2.5 4 nA
Input Offset Current I
OS
10 50 pA
AD8551/AD8554 −40°C ≤ T
A
≤ +125°C 150 200 pA
AD8552 −40°C ≤ T
A
≤ +85°C 30 150 pA
AD8552 −40°C ≤ T
A
≤ +125°C 150 400 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 2.7 V 115 130 dB
−40°C ≤ T
A
≤ +125°C 110 130 dB
Large Signal Voltage Gain
1
A
VO
R
L
= 10 kΩ, V
O
= 0.3 V to 2.4 V
110
140
dB
−40°C ≤ T
A
≤ +125°C 105 130 dB
Offset Voltage Drift ΔV
OS
/ΔT −40°C ≤ T
A
≤ +125°C 0.005 0.04 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to GND 2.685 2.697 V
R
L
= 100 kΩ to GND @ −40°C to +125°C 2.685 2.696 V
R
L
= 10 kΩ to GND 2.67 2.68 V
R
L
= 10 kΩ to GND @ −40°C to +125°C 2.67 2.675 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V+ 1 10 mV
R
L
= 100 kΩ to V+ @ −40°C to +125°C 2 10 mV
R
L
= 10 kΩ to V+ 10 20 mV
R
L
= 10 kΩ to V+ @ −40°C to +125°C 15 20 mV
Short-Circuit Limit I
SC
±10 ±15 mA
−40°C to +125°C ±10 mA
Output Current
I
O
±10
mA
−40°C to +125°C ±5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 5.5 V 120 130 dB
−40°C ≤ T
A
≤ +125°C 115 130 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 750 900 μA
−40°C ≤ T
A
≤ +125°C 950 1000 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.5 V/μs
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 1 MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0 Hz to 10 Hz 1.6 μV p-p
Voltage Noise Density e
n
f = 1 kHz 75 nV/√Hz
Current Noise Density i
n
f = 10 Hz 2 fA/√Hz
1
Gain testing is dependent upon test bandwidth.