Datasheet

Data Sheet AD8551/AD8552/AD8554
Rev. E | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 5 V, V
CM
= 2.5 V, V
O
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 5 μV
−40°C ≤ T
A
≤ +125°C 10 μV
Input Bias Current
I
B
10
50
pA
AD8551/AD8554 −40°C ≤ T
A
≤ +125°C 1.0 1.5 nA
AD8552 −40°C ≤ T
A
≤ +85°C 160 300 pA
AD8552 −40°C ≤ T
A
≤ +125°C 2.5 4 nA
Input Offset Current I
OS
20 70 pA
AD8551/AD8554
−40°C ≤ T
A
≤ +125°C
150
200
pA
AD8552 −40°C ≤ T
A
≤ +85°C 30 150 pA
AD8552 −40°C ≤ T
A
≤ +125°C 150 400 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to +5 V 120 140 dB
−40°C ≤ T
A
≤ +125°C 115 130 dB
Large Signal Voltage Gain
1
A
VO
R
L
= 10 kΩ, V
O
= 0.3 V to 4.7 V 125 145 dB
−40°C ≤ T
A
≤ +125°C 120 135 dB
Offset Voltage Drift ΔV
OS
/ΔT −40°C ≤ T
A
≤ +125°C 0.005 0.04 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to GND 4.99 4.998 V
R
L
= 100 kΩ to GND @ −40°C to +125°C 4.99 4.997 V
R
L
= 10 kΩ to GND 4.95 4.98 V
R
L
= 10 kΩ to GND @ −40°C to +125°C 4.95 4.975 V
Output Voltage Low
V
OL
R
L
= 100 kΩ to V+
1
10
mV
R
L
= 100 kΩ to V+ @ −40°C to +125°C 2 10 mV
R
L
= 10 kΩ to V+ 10 30 mV
R
L
= 10 kΩ to V+ @ −40°C to +125°C 15 30 mV
Output Short-Circuit Limit Current I
SC
±25 ±50 mA
−40°C to +125°C ±40 mA
Output Current I
O
±30 mA
−40°C to +125°C ±15 mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S
= 2.7 V to 5.5 V
120
130
dB
−40°C ≤ T
A
≤ +125°C 115 130 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 850 975 μA
−40°C ≤ T
A
≤ +125°C 1000 1075 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.4 V/μs
Overload Recovery Time 0.05 0.3 ms
Gain Bandwidth Product GBP 1.5 MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0 Hz to 10 Hz 1.0 μV p-p
e
n
p-p 0 Hz to 1 Hz 0.32 μV p-p
Voltage Noise Density
e
n
f = 1 kHz
42
nV/√Hz
Current Noise Density i
n
f = 10 Hz 2 fA/√Hz
1
Gain testing is dependent upon test bandwidth.